A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.

A semiconductor device includes a three-dimensional monolithic vertical transistor memory cell with unified inter-tier cross-couple, including a bottom tier including a contact disposed on a first inverter gate, a top tier including a second inverter gate, and a monolithic inter-tier via (MIV) that lands on the contact via the second inverter gate.

A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

A complementary metal-oxide semiconductor (CMOS) circuit and a method of fabricating the device are described. The circuit includes an n-channel field effect transistor (nFET), the nFET including a high-k dielectric layer on an interlayer. The CMOS circuit also includes a p-channel field effect transistor (pFET), the pFET including the high-k dielectric layer on the interlayer and additionally including an aluminum-based cap layer between the high-k dielectric layer and a pFET work function setting metal. Metal atoms from the cap layer do not intermix with the interlayer.

A thermal management system includes an integrated circuit (IC). The IC includes a plurality of digitally addressable sectors. Each sector includes an on-die sensing element. The on-die sensing element includes an on-die temperature sensor configured to measure a sector temperature and provide an analog signal associated with the sector temperature; and an on-die digitizer configured to generate a digital sensed temperature signal based on the analog signal. The IC further includes a first output configured to output a plurality of digital sensed temperature signals from the plurality of sectors.

Provided herein are semiconductor dies including multiple controllers for operating over an extended temperature range. In certain embodiments, a semiconductor die includes multiple circuit modules, a temperature sensor that generates a detected temperature signal, an interface that communicates with an external host, a primary controller coupled to the interface and operable to control the circuit modules, and a secondary controller coupled to the interface. In response to the detected temperature signal indicating that the temperature of the semiconductor die exceeds a threshold temperature, the primary controller enables the secondary controller, which in turn disables the primary controller and at least a portion of the plurality of circuit modules to reduce heat dissipation.

A semiconductor device includes a bottom tier including a plurality of first vertical transistors and at least one contact disposed on a first inverter gate. The device further includes a top tier including a plurality of second vertical transistors and a second inverter gate, and a monolithic inter-tier via (MIV) that lands on the at least one contact via the second inverter gate to create a three-dimensional monolithic vertical transistor memory cell with unified inter-tier cross-couple.

A semiconductor device is provided. The semiconductor device includes a transistor stack having a plurality of transistor pairs that are stacked over a substrate. Each transistor pair of the plurality of transistor pairs includes a n-type transistor and a p-type transistor that are stacked over one another. The plurality of transistor pairs have a plurality of gate electrodes that are stacked over the substrate and electrically coupled to gate structures of the plurality of transistor pairs, and a plurality of source/drain (S/D) local interconnects that are stacked over the substrate and electrically coupled to source regions and drain regions of the plurality of transistor pairs. The semiconductor device further includes one or more conductive planes formed over the substrate. The one or more conductive planes are positioned adjacent to the transistor stack, span a height of the transistor stack and are electrically coupled to the transistor stack.

A method of calibrating a regulator includes: measuring at least one of a voltage and a current; comparing the measurement to a nominal value of the at least one of the voltage and the current; generating a correction parameter of the comparison of the measurement to the nominal value; and storing the correction parameter in a local memory of the regulator.

A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.