A display device includes a light-emitting unit and a light conversion layer disposed on the light-emitting unit. The light conversion layer includes plural quantum dot portions and a first shielding portion surrounding the plural quantum dot portions. One of the plural quantum dot portions has a surface, and at least a part of the surface is a curved surface. A first thickness of the first shielding portion is greater than a maximum thickness of one of the plural quantum dot portions.

A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

A flexible electronic assembly includes a flexible supporting assembly, an electronic component, and a cover layer. The flexible supporting assembly includes a first surface and a second surface opposite to the first surface. In a plan view of the flexible electronic assembly, the second surface includes a plurality of protrusions and one of the protrusions includes at least one rounded corner. The electronic component is coupled to the first surface of the flexible supporting assembly. The cover layer is coupled to the electronic component.

A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

A display device includes a light-emitting unit and a light conversion layer disposed on the light-emitting unit. The light conversion layer includes plural quantum dot portions and a first shielding portion surrounding the plural quantum dot portions. One of the plural quantum dot portions has a surface, and at least a part of the surface is a curved surface. A first thickness of the first shielding portion is greater than a maximum thickness of one of the plural quantum dot portions.

An example substrate includes a surface, a plurality of thin film layers disposed on the surface, and a conductive layer disposed on the surface. The conductive layer includes a bending structure. The bending structure includes a wavy edge and includes a plurality of openings, where a shape of at least one opening of the plurality of openings has a contour having a first curved portion, and a curvature of a portion of the wavy edge is different from a curvature of the first curved portion.

A display device includes a light-emitting unit and a light conversion layer. The light conversion layer is disposed on the light-emitting unit, and the light conversion layer includes plural quantum dot portions and a first shielding portion surrounding the plural quantum dot portions. One of the plural quantum dot portions has a surface and at least a part of the surface is a curved surface.

An integrated circuit (IC) structure includes a semiconductor substrate, a shallow trench isolation (STI) region, and a capacitor. The STI region is embedded in the semiconductor substrate. The capacitor includes first and second conductive stacks. The first conductive stack includes a first dummy gate strip disposed entirely within the STI region and a plurality of first metal dummy gate contacts landing on the first metal capacitor strip. The second conductive stack includes a second dummy gate strip disposed entirely within the STI region and extending in parallel with the first dummy gate strip, and a plurality of second dummy gate contacts landing on the second dummy gate strip, wherein the first conductive stack is electrically isolated from the second conductive stack.