An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunnelling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

A semiconductor storage device comprises a plurality of memory cells arranged in a matrix. Each of the memory cells includes: a semiconductor storage element including a silicon carbide substrate and a silicon carbide film on a first surface of the silicon carbide substrate; a lower electrode on a second surface facing away from the first surface of the silicon carbide substrate; and an upper electrode on at least part of a surface of the silicon carbide film, the surface facing away from another surface of the silicon carbide film in contact with the silicon carbide substrate. Each memory cell includes at least one basal plane dislocation formed at at least part of the semiconductor storage element.

A 3D semiconductor device including: a first level including logic circuits, the logic circuits include a plurality of first single crystal transistors and a first metal layer; a second level including a plurality of second transistors, where the second level includes memory cells including the plurality of second transistors; a second metal layer atop the second level; where the plurality of second transistors are junction-less transistors, where at least one of the plurality of second transistors includes polysilicon, where the memory cells are structured as a plurality of at least sixteen sub-arrays, where each of the sub-arrays is independently controlled, where at least one of the plurality of at least sixteen sub-arrays is at least partially atop at least one of the logic circuits, and where the at least one of the logic circuits is designed to control at least one of the plurality of at least sixteen sub-arrays.

The disclosure concerns a capacitive component including a trench and, vertically in line with the trench, first portions of a first silicon oxide layer and first portions of second and third conductive layers including polysilicon or amorphous silicon, the first portion of the first layer being between and in contact with the first portions of the second and third layers.

A 3D semiconductor device including: a first level including logic circuits, the logic circuits include a plurality of first single crystal transistors and a first metal layer; a second level including a plurality of second transistors, where the second level includes memory cells including the plurality of second transistors; a second metal layer atop the second level; where the plurality of second transistors are junction-less transistors, where at least one of the plurality of second transistors includes polysilicon, where the memory cells are structured as a plurality of at least sixteen sub-arrays, where each of the sub-arrays is independently controlled, where at least one of the plurality of at least sixteen sub-arrays is at least partially atop at least one of the logic circuits, and where the at least one of the logic circuits is designed to control at least one of the plurality of at least sixteen sub-arrays.

A fingerprint sensing chip and a terminal device are provided. The fingerprint sensing chip includes a first signal, a second signal and a driving signal. The second signal is generated based on the first signal, and the driving signal is generated by performing a ground raise process on the second signal. The driving signal is used to provide a driving voltage for fingerprint sensing.

A capacitive element of an integrated circuit includes first and second electrodes. The first electrode is formed by a first electrically conductive layer located above a semiconductor well doped with a first conductivity type. The second electrode is formed by a second electrically conductive layer located above the first electrically conductive layer of the semiconductor well. The second electrode is further formed by a doped surface region within the semiconductor well that is heavily doped with a second conductivity type opposite the first conductivity type, wherein the doped surface region is located under the first electrically conductive layer. An inter-electrode dielectric area electrically separates the first electrode and the second electrode.

An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunneling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

A circuit includes: a first node to receive a first current; a first resistive element receiving a first branch current of the first current; first transistors each including a first terminal connected to the second end of the first resistive element; a second resistive element connected to the first node and receiving a second branch current of the first current; a second node to receive a second current; a second transistor including a first terminal, the first terminal of the second transistor connected to the second node and receiving a first branch current of the second current; a third resistive element connected to the second node and receiving a second branch current of the second current; wherein a temperature coefficient is adjusted by a resistance of the second resistive element and a resistance of the third resistive element and corresponding to the first current.

Some embodiments include a memory array having a first set of lines extending along a first direction, and a second set of lines over the first set of lines and extending along a second direction. Lines of the second set cross lines of the first set at cross-point locations. Memory structures are within the cross-point locations. Each memory structure includes a top electrode material, a bottom electrode material and a programmable material. Rails of insulative material extend parallel to the lines of the second set and alternate with the lines of the second set along the first direction. The programmable material has first regions within the memory structures and second regions over the rails of insulative material. A planarized surface extends across the lines of the second set and across the second regions of the programmable material. Some embodiments include methods of forming memory arrays.