The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The signal output external terminal is electrically connected to the first through-via via a first rewiring line, the signal input external terminal is electrically connected to the second through-via via a second rewiring line, and a third rewiring line being electrically independent is arranged in a layer in which the first rewiring line and the second rewiring line are arranged. The present disclosure can be applied to, for example, the image pickup device, and the like.

A distance measurement image pickup apparatus has two measurement periods. In a first distance measurement period, short pulsed light (1T) is irradiated, and exposure is performed in a plurality of exposure periods (A, B, and C) in which exposure timings are shifted. In each exposure period, an exposure gate is opened a plurality of times to perform repetitive exposure, and a first non-exposure period is provided from when a last exposure gate is closed until subsequent pulsed light is irradiated. In a second distance measurement period, long pulsed light (4T) is irradiated, and exposure is performed in a plurality of exposure periods (A, B, and C) in which exposure timings are shifted. In each exposure period, exposure is performed by opening the exposure gate only once, and a second non-exposure period is provided from when a last exposure gate is closed until subsequent pulsed light is irradiated.

A light receiving element that has a structure in which p-n junctions contact the interface between a compound semiconductor material and an insulating film and that can reduce a dark current is provided. A light receiving element includes a plurality of pixels. Each of the plurality of pixels includes a light absorption layer that has a first surface from which light enters and that includes a compound semiconductor material, a first-conductivity-type first semiconductor layer that is provided on a side of a second surface of the light absorption layer, the second surface being opposite to the first surface, and has bandgap energy greater than that of the light absorption layer, a second-conductivity-type selection region that is provided in such a manner as to reach the light absorption layer from a second surface of the first semiconductor layer, the second surface being opposite to a first surface on a side of the light absorption layer, and contacts the first semiconductor layer, a first insulating film that is provided on a side of the second surface of the first semiconductor layer and contacts the first semiconductor layer and the selection region, and a first electrode provided, for each of the pixels, on the side of the second surface of the first semiconductor layer. The first insulating film has a non-volatile electric charge with a same polarity as that of one of the semiconductor layer and the selection region that has a higher mobile charge density.

The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.

A radiation imaging device according to one embodiment includes a radiation detection panel having a first surface on which a detection region is formed, and a second surface on a side opposite to the first surface, a base substrate having a support surface configured to face the second surface and configured to support the radiation detection panel, and a flexible circuit substrate connected to the radiation detection panel, wherein an end portion of the base substrate corresponding to a portion to which the flexible circuit substrate is connected is located further inward than an end portion of the radiation detection panel when seen in a first direction orthogonal to the support surface, and the base substrate has a protruding portion which protrudes further outward than the radiation detection panel at a position at which the base substrate does not overlap the flexible circuit substrate when seen in the first direction.

A semiconductor device (1) according to the present disclosure includes a semiconductor chip (2), an interposer substrate (3), and a die-bonding material (4) formed in a partially opened annular shape in a plan view. The semiconductor chip (2) includes a region in which an integration density of an electronic circuit is high (23, 24, and 25) and a region in which the integration density is low (22). The semiconductor chip (2) is implemented on the interposer substrate (3). The die-bonding material (4) formed in a partially opened annular shape in a plan view is provided between the region in which the integration density is high (23, 24, and 25) in the semiconductor chip (2) and the interposer substrate (3).

A semiconductor module includes a semiconductor device having a first land, a second land, and a third land, a wiring board having a substrate, and a fourth land, a fifth land, and a sixth land disposed on the main surface of the substrate, a chip component having a first electrode and a second electrode disposed across a distance in the longitudinal direction and being disposed between the wiring board and the semiconductor device, a first solder joint for bonding the first land, the fourth land, and the first electrode, a second solder joint for bonding the second land, the fifth land, and the second electrode, and a third solder joint for bonding the third land and the sixth land. The volume of the first solder joint and the volume of the second solder joint are each larger than the volume of the third solder joint.

An image sensing device, method, an electronic apparatus, and a medium are provided. The image sensing device includes an image acquisition circuit comprising a plurality of image acquisition layer arrays, where at least one of the plurality of image acquisition layer arrays includes a reference layer, a first acquisition layer, and a second acquisition layer. The first acquisition layer is located under the reference layer and is configured to interact with the reference layer, to which a first electric signal is applied, to generate a first image signal. The second acquisition layer is located under the first acquisition layer and is configured to interact with the first acquisition layer to generate a second image signal. An image processing circuit is connected with the image acquisition circuit and configured to generate a target image according to the first image signal and the second image signal.

Provided are an imaging device and an electronic apparatus capable of suppressing deterioration in performance due to charge accumulation. An imaging device includes: a photoelectric conversion layer having a first surface and a second surface located on an opposite side to the first surface; a first electrode located on a side of the first surface; and a second electrode located on a side of the second surface. In a thickness direction of the photoelectric conversion layer, when a region overlapping with the first electrode is defined as a first region, and a region deviating from the first electrode is defined as a second region, a first film thickness of the photoelectric conversion layer in at least a part of the first region is thinner than a second film thickness of the photoelectric conversion layer in the second region.

There are provided a solid-state imaging device capable of improving quantum efficiency while suppressing occurrence of color mixture, and a method of manufacturing such a solid-state imaging device. According to the present disclosure, a solid-state imaging device (100, 100a, 100b, 100c) is provided. The solid-state imaging device (100, 100a, 100b, 100c) includes a first region (4, 4a, 4b) and a second region (5, 5a) in a light receiving surface of an imaging pixel (1, 1a, 1b, 1c). The first region (4, 4a, 4b) is provided with unevenness. The second region (5, 5a) is provided with unevenness having a pitch narrower than that of the unevenness in the first region (4, 4a, 4b).