A system for imaging a scene, includes a plurality of optical sensors arranged on an integrated circuit and a plurality of sets of interference filters, where each set of interference filters of the plurality of sets of interference filters includes a plurality of interference filters that are arranged in a pattern and each interference filter of the plurality of filters is configured to pass light in a different wavelength range, where each set of interference filters of the plurality of interference filters is associated with a spatial area of the scene. The system includes a plurality of rejection filters arranged in a pattern under each set of interference filters, where each rejection filter of the plurality of rejection filters is configured to substantially reject light of predetermined wavelengths. The system further includes one or more processors adapted to provide a spectral response for a spatial area of the scene associated with the set of interference filters.

An image sensor includes: a substrate, having first and second surfaces opposing each other in a first direction, on which a plurality of unit pixels are arranged, the plurality of unit pixels including a normal pixel, an autofocusing pixel, and a compensation pixel in a direction, parallel to the first surface; a photodiode disposed in the substrate in each of the plurality of unit pixels; and a device isolation layer disposed between the plurality of unit pixels. The unit pixels include color filters, separated from each other by a grid, and microlenses disposed on the color filters. The compensation pixel is disposed on one side of the autofocusing pixel and includes a compensation microlens, smaller than a normal microlens included in the normal pixel, and a transparent color filter separated from adjacent color filters by a compensation grid smaller than a normal grid included in the normal pixel.

A depth sensor and an image detecting system including the same are provided. The depth sensor includes a pixel that generates an image signal based on a sensed light. The pixel includes a first photo transistor that integrates first charges based on a first photo gate signal toggling during an integration period, a second photo transistor that integrates second charges based on a second photo gate signal toggling during the integration period, a first transfer transistor that transfers the first charges to a first floating diffusion node based on a first transfer gate signal, a second transfer transistor that transfers the second charges to a second floating diffusion node based on the first transfer gate signal, and a switch that is connected with the first photo transistor, the second photo transistor, the first transfer transistor, and the second transfer transistor.

The present invention disclosures an image sensor structure and a formation method thereof, wherein comprising: a pixel unit array, a peripheral circuit set at the periphery of the pixel unit array, and a composite shield structure around the pixel unit array and between the pixel unit array and the peripheral circuit, the composite shield structure comprises a light shield structure and a heat shield structure; wherein, the light shield structure comprises a metal isolation structure around the pixel unit array for isolating light emitted by the peripheral circuit, and the heat shield structure comprises a cavity set inside the metal isolation structure, the cavity is filled with a thermal isolation medium for preventing heat transfer to the pixel unit array. The present invention can avoid image quality deterioration and distortion caused by light and heat of the peripheral circuit of the image sensor.

The present technique improves the quality of image data in a solid-state image sensor provided with a light control element.

The solid-state image sensor includes a pair of electrodes and the light control element. In the solid-state image sensor including the pair of electrodes and the light control element, the pair of electrodes are disposed along a predetermined arrangement direction perpendicular to an optical axis of incident light. Additionally, in the solid-state image sensor, the light control element is disposed between the pair of electrodes disposed along the predetermined arrangement direction perpendicular to the optical axis of the incident light, and transmits the incident light at a transmittance based on a voltage between the pair of electrodes.

A solid-state imaging device includes a light-receiving surface, a plurality of pixels each including a photoelectric conversion section that photoelectrically converts light incident through the light-receiving surface, and a separation section that electrically and optically separates each photoelectric conversion section. Each of the pixels includes a charge-holding section that holds charges transferred from the photoelectric conversion section, a transfer transistor that includes a vertical gate electrode reaching the photoelectric conversion section, and transfers charges from the photoelectric conversion section to the charge-holding section, and a light-blocking section disposed in a layer between the photoelectric conversion section and the charge-holding section. A plurality of the vertical gate electrodes are electrically coupled together in a plurality of first pixels adjacent to each other among the plurality of pixels.

A selection pixel where signal readout is performed and a reference pixel where signal readout is not performed are arranged in a pixel array section, and an amplification transistor of the selection pixel and an amplification transistor of the reference pixel each source electrode of which is connected in common to a common wire are connected with a constant current source via the common wire to form a differential amplification circuit. Then, a bypass control section which selectively establishes connection between the constant current source and a differential output node of the differential amplification circuit and limits a voltage of the differential output node to a predetermined voltage by causing a bypass current to flow between the constant current source and the differential output node, and a current path for bypass current that supplies the bypass current to the constant current source through the pixel array section are included.

The present disclosure provides a semiconductor structure and a method for fabricating a semiconductor structure, wherein the semiconductor structure includes a device layer, including a terminal region and a pixel region adjacent to the terminal region, a conductive pad in the terminal region, and an isolation structure in the pixel region, wherein the isolation structure includes a first conductive material.

Image sensing devices according to present disclosure include metal gate structures in a pixel device. Particularly, the metal gate structures include a ferroelectric layer and a conductive layer to form a negative capacitance device in the gate stack. As a result, the transistors in the pixel device have reduced threshold swing, improved gain and reduced threshold voltage shift. The pixel device according to the present disclosure includes a combination of metal gate and polycrystalline gate, which provides flexibility in pixel device design and improves performance.

An imaging device includes a first pixel including a first photoelectric conversion region disposed in a first substrate and that converts incident light into first electric charges, and a first readout circuit including a first converter that converts the first electric charges into a first logarithmic voltage signal. The first converter includes a first transistor coupled to the first photoelectric conversion region and a second transistor coupled to the first transistor. The imaging device includes a wiring layer on the first substrate and includes a first level of wirings arranged in a first arrangement overlapping the first photoelectric conversion region and in a second arrangement overlapping the first and second transistors, the second arrangement being different than the first arrangement.