An energy harvesting imaging sensor includes an array of pixel structures each formed from a semiconductor having a photodiode overlying a photovoltaic diode. The photodiode and photovoltaic diode are implemented as a vertically stacked P+/N.sub.WELL/P.sub.SUB junction. This structure enables simultaneous imaging and energy harvesting by generating charge in the photodiode that is indicative of light impinging on the photodiode and simultaneously generating charge from the light in the photovoltaic diode located underneath the photodiode.

An image sensor device includes a transistor disposed in a pixel region; a salicide block layer covering the pixel region; a first ILD layer covering the salicide block layer; a second ILD layer on the first ILD layer; a source contacts extending through the second and first ILD layers and the salicide block layer, and including first polysilicon plug in the first ILD layer, first self-aligned silicide layer on the polysilicon plug and first conductive metal layer on the first self-aligned silicide layer; and a drain contact extending through the second and first ILD layers and the salicide block, and including second polysilicon plug in first ILD layer, second self-aligned silicide layer on the second polysilicon plug, and second conductive metal layer on the second self-aligned silicide layer.

A display includes a display portion formed of an array of unit pixels that each respectively include a light source pixel and a detector pixel. The display includes a control driver including a light source driver and a data driver which are respectively connected to each light source pixel, and a detector driver which is connected to each detector pixel. The display includes a controller configured to control the control driver to operate the display portion in a first mode, a second mode, and a third mode that are each different from each other.

Methods and apparatus for a first photodetector array die having pixels from a first end to a second end and a second photodetector array die having pixels from a first end to a second end. A readout integrated circuit (ROIC) can be electrically coupled to the first and second photodetector array die. One or more microlenses can steer light onto the photodetector arrays.

A unit pixel circuit includes a first photodiode, a second photodiode different from the first photodiode, a first floating diffusion node in which charges generated in the first photodiode are accumulated, a second floating diffusion node in which charges generated in the second photodiode are accumulated, a capacitor connected to the first floating diffusion node and a first voltage node, and accumulating overflowed charges of the first photodiode, a first switch transistor connecting the first floating diffusion node to a third floating diffusion node, a reset transistor connecting the third floating diffusion node to a second voltage node, a gain control transistor connecting the second floating diffusion node to the third floating diffusion node, and a second switch transistor connected to the first voltage node and the second voltage node.

A photoelectric conversion device having pixels lined up in a plurality of rows and a plurality of columns, the photoelectric conversion device including: a semiconductor layer which has a front surface and a rear surface and which includes an avalanche photodiode; a wiring layer arranged on a side of the front surface of the semiconductor layer; and a trench arranged in a boundary portion between two pixels, wherein the trench has at least any of a metal or a metal compound arranged therein and extends from inside of the semiconductor layer to inside of the wiring layer.

An image sensor includes a pixel isolation structure in a semiconductor substrate. The pixel isolation structure defines a plurality of pixel regions, a photoelectric conversion region in the semiconductor substrate on each of the pixel regions, a floating diffusion region in the semiconductor substrate and spaced apart from the photoelectric conversion region. A transfer gate electrode is disposed between the photoelectric conversion region and the floating diffusion region on each of the pixel regions. A dielectric layer is disposed on the semiconductor substrate and covers the transfer gate electrode. A plurality of active patterns spaced apart from each other is disposed on a top surface of the dielectric layer. A plurality of pixel transistors is disposed on corresponding active patterns. In a plan view, at least one of the active patterns overlaps a portion of the pixel isolation structure.

The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The signal output external terminal is electrically connected to the first through-via via a first rewiring line, the signal input external terminal is electrically connected to the second through-via via a second rewiring line, and a third rewiring line being electrically independent is arranged in a layer in which the first rewiring line and the second rewiring line are arranged. The present disclosure can be applied to, for example, the image pickup device, and the like.

A light receiving element array includes one or more unit element blocks. Each of the unit element blocks includes different light receiving elements with different element structures.

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.