A light receiving element capable of detecting predetermined light among incident light beams with high sensitivity by a simple structure is provided. A light receiving element 100 that detects ultraviolet rays UV in sunlight SL includes an N-type semiconductor substrate 1, a P-type conductive layer 2 formed on the surface of the semiconductor substrate 1, an N-type ultraviolet absorption layer 3 formed on the surface of the conductive layer 2, transmitting visible rays VL in the sunlight SL, and absorbing the ultraviolet rays UV to excite electrons, and an N-type detection layer 4 formed at a position separated from the ultraviolet absorption layer 3 on the surface of the conductive layer 2 and detecting electrons flowing from the ultraviolet absorption layer 3 as a first photocurrent I.sub.L1.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of image sensors, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and a plurality of pixel control circuits, where each of the plurality of image sensors is directly connected to at least one of the plurality of pixel control circuits, and where the integrated device includes a plurality of memory circuits.

An imaging device including a pixel array including pixels, each pixel including a photoelectric converter including a first and second electrode, and a first photoelectric conversion layer between the first and second electrode, and a transistor having a gate coupled to the first electrode, the transistor outputting a signal corresponding to an amount of the signal charge collected by the first electrode. The device further including voltage supply circuitry coupled to the second electrode of each of the pixels, where the voltage supply circuitry, in each of consecutive frame periods, supplies a first voltage two or more times to form exposure periods in which the signal charge is collected by the first electrode, and supplies a second voltage one or more times to form non-exposure periods that separate the exposure periods from each other, and start time of each of the exposure periods is periodic over the consecutive frame periods.

There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.

A solid-state image sensor includes a plurality of imaging element blocks each configured from a plurality of imaging elements. Each of the imaging elements includes a first electrode, a charge accumulating electrode arranged in a spaced relation from the first electrode, a photoelectric conversion portion contacting with the first electrode and formed above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion portion. The first electrode and the charge accumulating electrode are provided on an interlayer insulating layer, and the first electrode is connected to a connection portion provided in the interlayer insulating layer.

An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

An imaging device includes a first photoelectric converter, a second photoelectric converter, and a first capacitive element. The first photoelectric converter converts light having a wavelength in a first wavelength region into first electric charge. The second photoelectric converter converts light having a wavelength in a second wavelength region into second electric charge. The second photoelectric converter is arranged at a different height from the first photoelectric converter in a thickness direction of the imaging device. The first capacitive element accumulates the first electric charge and the second electric charge.

Image sensors are provided. An image sensor includes a color filter layer. The image sensor includes a metal structure adjacent a sidewall of the color filter layer. The image sensor includes an insulating layer on the color filter layer. Moreover, the image sensor includes an electrode layer on the insulating layer. Methods of forming image sensors are also provided.

To provide a back-illuminated solid-state imaging device that can improve image quality. Provided is a back-illuminated solid-state imaging device that includes at least a semiconductor substrate, an organic photoelectric conversion film, and an optical waveguide. The organic photoelectric conversion film is formed on one of front and back surfaces of the semiconductor substrate. The optical waveguide is formed between the semiconductor substrate and the organic photoelectric conversion film.