A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

An image sensor includes a pixel division structure, a light sensing element, a color filter array layer and a microlens. The pixel division structure extends through a substrate in a vertical direction, and defines unit pixel regions. The light sensing element is in each unit pixel region. The color filter array layer including color filters is on the substrate. The microlens is on the color filter array layer. The pixel division structure includes a core and a lateral pattern structure on a sidewall thereof. The core includes a first filling pattern including polysilicon doped with impurities at a first concentration and a second filling pattern in a space formed by the first filling pattern. A sidewall of the second filling pattern is covered by the first filling pattern, and the second filling pattern includes polysilicon doped with impurities at a second concentration different from the first concentration.

A method for forming a pixel includes forming, in a semiconductor substrate, a wide trench having an upper depth with respect to a planar top surface of the semiconductor substrate. The method also includes ion-implanting a floating-diffusion region between the planar top surface and a junction depth in the semiconductor substrate. In a cross-sectional plane perpendicular to the planar top surface, the floating-diffusion region has (i) an upper width between the planar top surface and the upper depth, and (ii) between the upper depth and the junction depth, a lower width that exceeds the upper width. Part of the floating-diffusion region is beneath the wide trench and between the upper depth and the junction depth.

A pixel-array substrate includes a semiconductor substrate, a buffer layer, and a metal annulus. The semiconductor substrate includes a first-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first-photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first-photodiode region. The buffer layer is on the back surface and has (i) a thin buffer-layer region located above the first-photodiode region and (ii) a thick buffer-layer region forming an annulus above the trench in a plane parallel to the cross-sectional plane. The metal annulus is on the buffer layer and covers the thick buffer-layer region.

An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

To provide a solid-state image sensor in which two or more semiconductor chips are bonded together without voids occurring in their bonding surfaces despite the conductive films bonded together at a high areal ratio. The solid-state image sensor includes at least a first semiconductor chip carrying thereon one or more than one of a first conductor and a pixel array, and a second semiconductor chip which bonds to the first semiconductor chip and carries thereon one or more than one of a second conductor and a logic circuit, with the first semiconductor chip and the second semiconductor chip bonding together in such a way that the first conductor and the second conductor overlap with each other and are electrically connected to each other, and the bonding occurring such that the first conductor and the second conductor differ from each other in the area of their bonding surfaces.

A process for fabricating a detecting device includes producing a getter pad based on amorphous carbon resting on a mineral sacrificial layer that covers a thermal detector and producing a thin encapsulating layer that rests on the mineral sacrificial layer and that covers an upper face and sidewalls of the getter pad. The mineral sacrificial layer is removed via a first chemical etch, and a protective segment of the getter pad is removed via a second chemical etch.

A sensor arrangement including at least one electro-optical sensor which is secured to a receiving structure of a sensor holder. The electro-optical sensor includes a sensor housing with an optically active sensor layer that is arranged thereon. The optically active sensor layer forms a light-sensitive plane. The sensor holder includes a non-adjustable receiving structure which compensates for a previously determined deviation in shape of the electro-optical sensor from a desired shape.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

A semiconductor device includes a conductive substrate and an encapsulation structure. The conductive substrate has a plurality of pixels. The encapsulation structure is disposed on the conductive substrate and includes at least one light-collimating unit. The light-collimating unit includes a transparent substrate and a patterned light-shielding layer. The patterned light-shielding layer is disposed on the transparent substrate. The patterned light-shielding layer has a plurality of holes disposed to correspond to the pixels.