The present disclosure relates to an image sensor including a pixel along a substrate. The pixel includes a first semiconductor region having a first doping type. A second semiconductor region is directly over the first semiconductor region. The second semiconductor region has a second doping type opposite the first doping type and meets the first semiconductor region at a p-n junction. A ring-shaped third semiconductor region laterally surrounds the first and second semiconductor regions. The ring-shaped third semiconductor region has the first doping type. A ring-shaped fourth semiconductor region laterally surrounds the ring-shaped third semiconductor region. The ring-shaped fourth semiconductor region has the second doping type. A ring-shaped fifth semiconductor region is directly over the ring-shaped third semiconductor region and has the second doping type.

The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The signal output external terminal is electrically connected to the first through-via via a first rewiring line, the signal input external terminal is electrically connected to the second through-via via a second rewiring line, and a third rewiring line being electrically independent is arranged in a layer in which the first rewiring line and the second rewiring line are arranged. The present disclosure can be applied to, for example, the image pickup device, and the like.

An object to provide a radiation detector and method for manufacturing a radiation detector. According to an embodiment, a radiation detector includes: a photodiode layer having at least one pixel; and a scintillator layer including at least one geometrical shape including a scintillating material and a polymer, wherein the scintillating material is configured to convert incident ionising radiation into nonionising electromagnetic radiation, and wherein the at least one geometrical shape is configured to guide at least part of the converted electromagnetic radiation into the at least one pixel. A radiation detector and a method for manufacturing a radiation detector are also disclosed.

A light receiving element that has a structure in which p-n junctions contact the interface between a compound semiconductor material and an insulating film and that can reduce a dark current is provided. A light receiving element includes a plurality of pixels. Each of the plurality of pixels includes a light absorption layer that has a first surface from which light enters and that includes a compound semiconductor material, a first-conductivity-type first semiconductor layer that is provided on a side of a second surface of the light absorption layer, the second surface being opposite to the first surface, and has bandgap energy greater than that of the light absorption layer, a second-conductivity-type selection region that is provided in such a manner as to reach the light absorption layer from a second surface of the first semiconductor layer, the second surface being opposite to a first surface on a side of the light absorption layer, and contacts the first semiconductor layer, a first insulating film that is provided on a side of the second surface of the first semiconductor layer and contacts the first semiconductor layer and the selection region, and a first electrode provided, for each of the pixels, on the side of the second surface of the first semiconductor layer. The first insulating film has a non-volatile electric charge with a same polarity as that of one of the semiconductor layer and the selection region that has a higher mobile charge density.

Noise, color mixture, and the like are suppressed while reducing a restriction on layout disposition. An imaging apparatus includes a semiconductor substrate, a photoelectric conversion unit which is provided in the semiconductor substrate and generates charge corresponding to the amount of received light by photoelectric conversion, a charge holding unit which is disposed on a side closer to a first surface of the semiconductor substrate than to the photoelectric conversion unit, and holds the charge transferred from the photoelectric conversion unit, a charge transfer unit which transfers the charge from the photoelectric conversion unit to the charge holding unit, a vertical electrode which is disposed in a depth direction of the semiconductor substrate, the vertical electrode transmitting the charge generated by the photoelectric conversion unit to the charge transfer unit, and a first light control member which is disposed at a position overlapping the vertical electrode when the semiconductor substrate is seen in a plan view from a normal direction of the first surface, and is provided in a pixel region without straddling a boundary between pixels.

Sensors, imaging systems, and methods for forming a sensor with a specified depth profile are provided. One sensor includes a substrate and one or more components attached to the substrate. The sensor also includes a sensor die having a thinned backside and energy sensitive elements configured for detecting energy illuminating the thinned backside of the sensor die. The sensor further includes discrete thermally-conductive structures formed between a frontside of the sensor die and the substrate by a flip-chip process thereby bonding the sensor die to the substrate and causing the thinned backside of the sensor die to have a pre-selected shape. At least a portion of the discrete thermally-conductive structures electrically connect the sensor die to the one or more components.

Provided are an X-ray detector having fabrication fault tolerant structure and a method for manufacturing the same using a micro-transfer printing (MTP) technique. The X-ray detector may include a photodiode layer formed on a base substrate within a pixel area and including a plurality of photodiode pixel units, a dummy layer formed the base substrate within a peripheral area, a plurality of pixel driving integrated chips printed on the photodiode layer, a plurality of primary column and row integrated chips printed on the dummy layer, and metal lines coupling the column and row integrated chips with pixel driving integrated chips and other constituent elements, wherein the plurality of pixel driving integrated chips and primary column and row integrated chips are manufactured separately from the photodiode layer and the dummy layer and attached on the photodiode layer and the dummy layer, respectively.

A photodetector device is provided that includes a ROIC having a top surface with a plurality of electrically conductive first electrodes within a pattern of surface areas on the top surface each surface area having a border, and an electrically conductive electrode grid having a portion on the border of each of the surface areas; and a photodetector film overlying the surface area. The electrode grid can be configured to surround each surface area to define the borders of the surface areas as pixels. The photodetector film can be a colloidal quantum dot film. The ROIC has circuit elements signal-connected to the plurality of first electrodes. Methods for forming the photodetector device include photolithography and deposition methods.

The present disclosure provides a flat panel detection substrate, a fabricating method thereof and a flat panel detector. The flat panel detection substrate according to the present disclosure includes a base substrate; a bias electrode and a sense electrode on the base substrate; and a semiconductor layer over the bias electrode and the sense electrode, the semiconductor layer having a thickness greater than 100 nm.

Disclosed is a method of generating an output signal of a PDAF pixel of an optoelectronic image sensor array, including detecting pixel signals of the pixels of the image sensor arranged within the environment of a PDAF pixel; determining a structure direction of an image structure imaged onto the image sensor from the pixel signals of at least some of the pixels arranged within the environment; and generating the output signal of the PDAF pixel, wherein, the output signal is generated in one case as an interpolation signal from the pixel signals of further pixels arranged within the environment and in another case as an amplified signal by correcting the pixel signal of the PDAF pixel with an amplification factor, wherein the output signal of the PDAF pixel is generated as the amplified signal when the structure direction differs from the first direction by less than a predefined angle.