A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed within a substrate. The substrate has a front-side surface and a back-side surface. An absorption enhancement structure is disposed along the back-side surface of the substrate and overlies the photodetector. The absorption enhancement structure includes a plurality of protrusions that extend outwardly from the back-side surface of the substrate. Each protrusion comprises opposing curved sidewalls.

Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes and image sensor element disposed within a substrate. The substrate comprises a first material. The image sensor element includes an active layer comprising a second material different from the first material. A buffer layer is disposed between the active layer and the substrate. The buffer layer extends along outer sidewalls and a bottom surface of the active layer. A capping structure overlies the active layer. Outer sidewalls of the active layer are spaced laterally between outer sidewalls of the capping structure such that the capping structure continuously extends over outer edges of the active layer.

Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.

A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

A semiconductor package is provided. The package includes a semiconductor chip that includes photoelectric conversion elements provided on an active array region of the semiconductor chip; a transparent member on the semiconductor chip; and a spacer between the semiconductor chip and the transparent member, and horizontally spaced apart from the active array region. The spacer includes: a supporter that extends from a top surface of the semiconductor chip toward a bottom surface of the transparent member; a first adhesive pattern that is between the semiconductor chip and a bottom surface of the supporter; and a second adhesive pattern that is between the transparent member a top surface of the supporter. The spacer protrudes from a lateral surface of the semiconductor chip, and a lateral surface of the spacer is offset from the lateral surface of the semiconductor chip.

A semiconductor package is disclosed. The package includes a sensor die which is disposed on a package substrate. A cover structure is attached to a cover adhesive surrounding the sensor die, forming a cavity above the sensor die. The cover structure includes a primary cover structure and a secondary cover structure surrounding the primary cover structure. The secondary cover structure is configured to protect the primary cover structure from damage during packaging. The package also includes an encapsulant. The encapsulant covers side surfaces of the cover structure, sides of the cover adhesive, and exposed portions of the package substrate, leaving the first major cover surface exposed.

Photosensitive semiconducting devices, such as bipolar junction transistors (BJTs) can be built up over a substrate that may include a read-out integrated circuit (ROIC). Semiconducting layers can be deposited over the substrate and bottom electrodes that are on or at the substrate's top surface. The bottom electrodes may be the input pads of the ROIC. A top electrode is deposited over the semiconducting layers. The semiconducting layers can form BJTs between the bottom electrodes and the top electrode. The top electrode and the bottom electrodes are the BJTs collectors and emitters. The semiconducting layers include a P-type quantum dot layer and a N-type metal oxide layer. The quantum dots act as light sensors for the ROIC because photons absorbed in a semiconducting layer can produce a BJT base current. The BJTs can be formed without requiring a vacuum or patterning of the top electrode.

An image sensor includes a substrate having first and second surfaces and first and second regions. Unit pixels including photoelectric conversion layers are arranged inside the first region. A pixel separation pattern extends from the first surface to the second surface in the first region, separates each of the unit pixels, and includes a pixel separation spacer film and a pixel separation filling film. A dummy pixel separation pattern extends from the first surface to the second surface in the second region, and includes a dummy pixel separation filling film. A wiring structure disposed on the second surface includes an inter-wiring insulating film and a first wiring. A first contact directly connects the dummy pixel separation filling film and connects the dummy pixel separation filling film to the first wiring. A height of the pixel separation filling film is greater than a height of the dummy pixel separation filling film.