A semiconductor device including: a first S/D arrangement including a silicide-sandwiched portion of a corresponding active region having a silicide-sandwiched configuration, a first portion of a corresponding metal-to-drain/source (MD) contact structure, a first via-to-MD (VD) structure, and a first buried via-to-source/drain (BVD) structure; a gate structure over a channel portion of the corresponding active region; and a second S/D arrangement including a first doped portion of the corresponding active region; and at least one of the following: an upper contact arrangement including a first silicide layer over the first doped portion, a second portion of the corresponding MD contact structure; and a second VD structure; or a lower contact arrangement including a second silicide layer under the first doped portion, and a second BVD structure.

Semiconductor devices including backside capacitors and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including a front-side conductive line; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a backside conductive line, the backside conductive line having a line width greater than a line width of the front-side conductive line; and a first capacitor structure coupled to the backside interconnect structure.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a gate structure being provided on a surface of the substrate, and a source region and a drain region being provided in the substrate at two sides of the gate structure, respectively; and a contact located on the substrate, the contact including a first contact located on the substrate and a second contact located on a side of the first contact away from the substrate, in which an area of a bottom surface of the first contact is greater than an area of a top surface of the second contact.

A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, the channel pattern including semiconductor patterns stacked and spaced apart from each other, a gate electrode extending across the channel pattern, and inner spacers between the gate electrode and the source/drain pattern. The semiconductor patterns include stacked first and second semiconductor patterns. The gate electrode includes first and second portions, which are sequentially stacked between the substrate and the first and second semiconductor patterns, respectively. The inner spacers include first and second air gaps, between the first and second portions of the gate electrode and the source/drain pattern. The largest width of the first air gap is larger than that of the second air gap.

The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes a base, first contact structures, second contact structure, and third contact structures. The base includes an active region, and a source region, a gate region, and a drain region that are sequentially adjacent to each other are formed in the active region; the first contact structures are provided on the source region and the drain region; the second contact structure is provided on the gate region; the third contact structures are provided on first contact structures and the second contact structure, an area of a top surface of the first contact structure and an area of a top surface of the second contact structure are both larger than an area of a bottom surface of the third contact structure.

Methods for fabricating a semiconductor device are provided. The method can include forming a conductive material layer on a semiconductor device, the semiconductor device including at least two gate structures and at least two source/drain surfaces of at least two source/drain regions, wherein an interlevel dielectric layer separates each of the at least two gate structures from each of the at least two source/drain surfaces, wherein the conductive material layer extends through openings of the interlevel dielectric layer, contacting the at least two source/drain surfaces and forming at least two conductive material interconnects, and wherein the conductive material layer extends over the interlevel dielectric layer, forming an interconnect mask over portions of the conductive material layer, wherein the conductive material layer includes an up-via and forming an interconnect by subtractively etching a portion of the conductive material layer, exposed through the interconnect mask.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate and a quantum well stack disposed on the substrate. The quantum well stack may include a quantum well layer and a back gate, and the back gate may be disposed between the quantum well layer and the substrate.

Various examples of an integrated circuit with a sidewall spacer and a technique for forming an integrated circuit with such a spacer are disclosed herein. In some examples, the method includes receiving a workpiece that includes a substrate and a gate stack disposed upon the substrate. A spacer is formed on a side surface of the gate stack that includes a spacer layer with a low-k dielectric material. A source/drain region is formed in the substrate; and a source/drain contact is formed coupled to the source/drain region such that the spacer layer of the spacer is disposed between the source/drain contact and the gate stack.

A vertical nanowire semiconductor device manufactured by a method of manufacturing a vertical nanowire semiconductor device is provided. The vertical nanowire semiconductor device includes a substrate, a first conductive layer in a source or drain area formed above the substrate, a semiconductor nanowire of a channel area vertically upright with respect to the substrate on the first conductive layer, wherein a crystal structure thereof is grown in <111> orientation, a second conductive layer of a drain or source area provided on the top of the semiconductor nanowire, a metal layer on the second conductive layer, a NiSi.sub.2 contact layer between the second conductive layer and the metal layer, a gate surrounding the channel area of the vertical nanowire, and a gate insulating layer located between the channel area and the gate.

A high electron mobility transistor includes a stack of layers including a passivation layer and a heterojunction including a first semiconductor layer, a second semiconductor layer and a two-dimensional electron gas at the interface thereof, one surface of the passivation layer being in contact with the first semiconductor layer; a source metal contact and/or a drain metal contact and a gate electrode; an n+ doped zone situated inside the heterojunction; the source metal contact and/or the drain metal contact being positioned at the level of a recess formed in the stack of layers, the source metal contact and/or said drain metal contact having a thickness defined by an upper face and a lower face substantially parallel to the plane of the layers, the upper face being planar, the lower face being in contact with the n+ doped zone and below the interface between the first and second semiconductor layers.