A vertical semiconductor device includes one or more of a substrate, a buffer layer over the substrate, one or more drift layers over the buffer layer, and a spreading layer over the one or more drift layers.

Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.

According to an embodiment, provided is a semiconductor device including: a first electrode; a second electrode; and a silicon carbide layer disposed between the first electrode and the second electrode, the silicon carbide layer including: a first silicon carbide region of an n-type; and a second silicon carbide region disposed between the first silicon carbide region and the first electrode, the second silicon carbide being in contact with the first electrode, and the second silicon carbide containing one oxygen atom bonding with four silicon atoms.

A diode region includes: an n-type first semiconductor layer provided on a second-main-surface side in the semiconductor substrate; an n-type second semiconductor layer provided on the first semiconductor layer; a p-type third semiconductor layer provided closer to a first main surface of the semiconductor substrate than the second semiconductor layer; a first main electrode that applies a first potential to the diode; a second main electrode that applies a second potential to the diode; and a dummy active trench gate provided so as to extend from the first main surface of the semiconductor substrate and reach the second semiconductor layer. The dummy active trench gate includes the third semiconductor layer that is not applied with the first potential to be in a floating state on at least one of two side surfaces, and the dummy active trench gate is applied with a gate potential of the transistor.

A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, trenches, a gate insulating film, gate electrodes, and an interlayer insulating film. The gate insulating film is formed by performing nitriding and oxidation by at least two sessions of a heat treatment by a mixed gas containing nitric oxide and nitrogen, the gate insulating film being configured by a first gate insulating film that is a silicon nitride layer, a second gate insulating film that is a silicon oxide film, and a third gate insulating film that is a silicon oxide film having a nitrogen area density lower than that of the second gate insulating film.

The present invention relates to the field of semiconductors, and discloses a manufacturing method of a super junction and a super-junction Schottky diode thereof. The manufacturing method of the super junction includes forming an epitaxial layer on the surface of a wide-bandgap semiconductor substrate by an epitaxial growth process; implanting first doping ions into at least part of a region of the epitaxial layer along a preset crystal orientation of the wide-bandgap semiconductor to form a first conductive type region; and implanting second doping ions into at least part of the first conductive type region along the preset crystal orientation of the wide-bandgap semiconductor to form a second conductive type region, wherein the second doping ions and the first doping ions have different conductive types, and the preset crystal orientation is a crystal orientation which enables the doping ions to generate a channel effect when the doping ions are implanted along the preset crystal orientation.

The present disclosure relates to a wide band-gap merged p-i-n/Schottky, MPS, diode, and to a method of manufacturing the same. The present disclosure particularly relates to Silicon Carbide, SiC, MPS diodes. According to the present disclosure, the MPS diode includes different Schottky contacts with different IV characteristics, and/or ohmic contacts with a different contact resistance and/or threshold voltage. This allows the conduction area of the MPS diode to change more gradually with forward bias thereby avoiding drawbacks associated with a large conduction area when switching from a forward biasing mode to a reverse biasing mode. Therefore, the dynamic switching performance can be improved in a wide operation voltage range.

A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The first semiconductor material is substantially defect-free silicon carbide, and the second semiconductor material is silicon. A semiconductor device is formed in the second semiconductor layer. The semiconductor device can be a power MOSFET, diode, insulated gate bipolar transistor, cluster trench insulated gate bipolar transistor, and thyristor. The second semiconductor layer with the electrical component provides a first portion of a breakdown voltage for the semiconductor device and the first semiconductor layer and substrate provide a second portion of the breakdown voltage for the semiconductor device.

A method of manufacturing a silicon carbide semiconductor device includes selectively forming a semiconductor region of a conductivity type at a first main surface of a semiconductor substrate containing silicon carbide; forming a nickel layer above the semiconductor region; ion-implanting aluminum in the nickel layer; performing a heat treatment to the nickel layer implanted with the aluminum to thereby form an ohmic contact layer in ohmic contact with the semiconductor region; forming a first electrode that is in contact with the ohmic contact layer, the semiconductor region, and the semiconductor substrate; and forming a second electrode on a second main surface of the semiconductor substrate.

A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The second semiconductor material is silicon. A third semiconductor layer made of the second semiconductor material can be disposed between the first semiconductor layer and second semiconductor layer. A semiconductor device is formed in the second semiconductor layer. The semiconductor device can be a power MOSFET or diode. The second semiconductor layer with the electrical component provides a first portion of a breakdown voltage for the semiconductor device and the first semiconductor layer and substrate provide a second portion of the breakdown voltage for the semiconductor device.