A nitride semiconductor device includes: a substrate of a first conductivity type having a first surface and a second surface on a side of the substrate opposite the first surface; a first nitride semiconductor layer of the first conductivity type which is disposed on the first surface of the substrate and includes an acceptor impurity; a second nitride semiconductor layer of a second conductivity type disposed on the first nitride semiconductor layer, the second conductivity type being opposite to the first conductivity type; a first electrode disposed on the second surface of the substrate; a second electrode disposed on the first nitride semiconductor layer; and a gate electrode disposed on the second nitride semiconductor layer.

A semiconductor integrated circuit device (1000) includes: a first semiconductor chip CHP1 having a first circuit; and a second semiconductor chip (CHP2) having a second circuit and differing from the first semiconductor chip (CHP1). The semiconductor integrated circuit device (1000) further includes a control circuit (BTCNT) for controlling an operation of the first circuit and an operation of the second circuit in accordance with a control signal in a burn-in test, and the control circuit (BTCNT) controls the first circuit and the second circuit such that an amount of stress applied to the first semiconductor chip (CHP1) due to an operation of the first circuit and an amount of stress applied to the second semiconductor chip (CHP2) due to an operation of the second circuit differ from each other in the burn-in test.

A semiconductor integrated circuit device (1000) includes: a first semiconductor chip CHP1 having a first circuit; and a second semiconductor chip (CHP2) having a second circuit and differing from the first semiconductor chip (CHP1). The semiconductor integrated circuit device (1000) further includes a control circuit (BTCNT) for controlling an operation of the first circuit and an operation of the second circuit in accordance with a control signal in a burn-in test, and the control circuit (BTCNT) controls the first circuit and the second circuit such that an amount of stress applied to the first semiconductor chip (CHP1) due to an operation of the first circuit and an amount of stress applied to the second semiconductor chip (CHP2) due to an operation of the second circuit differ from each other in the burn-in test.

In a switching circuit, an inductance of an inductor of a shunt circuit is such that off capacitance of a second switching device that is in the off state when a first switching device is in the on state is used to define, in the shunt circuit, a series resonance circuit with a desired resonant frequency. Therefore, the frequency of an unnecessary signal to be attenuated is set to the resonant frequency of the series resonance circuit. Thus, the switching circuit achieves improved isolation characteristics with other circuits by attenuating the unnecessary signal.

B-TRAN bipolar power transistor devices and methods, using a drift region which is much thinner than previously proposed double-base bipolar transistors of comparable voltage. This is implemented in a high-bandgap semiconductor material (preferably silicon carbide). Very high breakdown voltage, and fast turn-off, are achieved with very small on-resistance.

B-TRAN bipolar power transistor devices and methods, using a drift region which is much thinner than previously proposed double-base bipolar transistors of comparable voltage. This is implemented in a high-bandgap semiconductor material (preferably silicon carbide). Very high breakdown voltage, and fast turn-off, are achieved with very small on-resistance.

In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5. In addition, the signal processing integrated circuit 5 comprises: a signal processing circuit 6 that processes the output signal output from the sensor element 4; a resistance element 8 that is connected between the output terminal 11 and the signal processing circuit 6, and that is disposed on an insulating film; diode elements 9, 10 that are connected between the output terminal 11 and the ground terminal 3, and that are serially connected with each other in opposite directions; and a capacitance element 7 that is connected between the ground terminal 3 and the signal processing circuit 6 side of the resistance element 8.

In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5. In addition, the signal processing integrated circuit 5 comprises: a signal processing circuit 6 that processes the output signal output from the sensor element 4; a resistance element 8 that is connected between the output terminal 11 and the signal processing circuit 6, and that is disposed on an insulating film; diode elements 9, 10 that are connected between the output terminal 11 and the ground terminal 3, and that are serially connected with each other in opposite directions; and a capacitance element 7 that is connected between the ground terminal 3 and the signal processing circuit 6 side of the resistance element 8.

The present disclosure relates to a tunnel FET device with a steep sub-threshold slope, and a corresponding method of formation. In some embodiments, the tunnel FET device has a dielectric layer arranged over a substrate. A conductive gate electrode and a conductive drain electrode are arranged over the dielectric layer. A conductive source electrode contacts the substrate at a first position located along a first side of the conductive gate electrode. The conductive drain electrode is arranged at a second position located along the first side of the conductive gate electrode. By arranging the conductive gate electrode over the dielectric layer at a position laterally offset from the conductive drain electrode, the conductive gate electrode is able to generate an electric field that controls tunneling of minority carriers, which can change the effective barrier height of the tunnel barrier, and thereby improving a sub-threshold slope of the tunnel FET device.

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.