Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

A Schottky metal is in Schottky-contact with a center portion of a surface of an epitaxial layer. A peripheral trench is formed by digging from the surface of the epitaxial layer on a boundary portion between an active region where the Schottky metal is in Schottky-contact with the surface of the epitaxial layer and a peripheral region outside of the active region in a surface layer portion of the epitaxial layer. An insulating film is formed on an entire area of inner wall surfaces of the peripheral trench. There is provided with a conductor which is connected to the Schottky metal and is opposed to the entire area of the inner wall surfaces of the peripheral trench via the insulating film in the peripheral trench.

A Schottky metal is in Schottky-contact with a center portion of a surface of an epitaxial layer. A peripheral trench is formed by digging from the surface of the epitaxial layer on a boundary portion between an active region where the Schottky metal is in Schottky-contact with the surface of the epitaxial layer and a peripheral region outside of the active region in a surface layer portion of the epitaxial layer. An insulating film is formed on an entire area of inner wall surfaces of the peripheral trench. There is provided with a conductor which is connected to the Schottky metal and is opposed to the entire area of the inner wall surfaces of the peripheral trench via the insulating film in the peripheral trench.

A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.

A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.

A semiconductor device according to an embodiment includes a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate, a capacitor having a first end and a second end, the second end being electrically connected to the second gate, a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source, a first resistor provided between the first end and the first gate, and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.

A Schottky barrier diode according to an exemplary embodiment of the present disclosure includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate, wherein the p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.

A Schottky barrier diode according to an exemplary embodiment of the present disclosure includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate, wherein the p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.

A mist-CVD apparatus contains a first atomizer for atomizing a first metal oxide precursor and generating a first mist of the first metal oxide precursor; a second atomizer for atomizing a second metal oxide precursor and generating a second mist of the second metal oxide precursor; a carrier-gas supplier for supplying a carrier gas to convey the first and second mists; a film-forming unit for forming a film on a substrate by subjecting the first and second mists to a thermal reaction; and a first conveyance pipe through which the first mist and the carrier gas are conveyed to the film forming chamber, a second conveyance pipe through which the second mist and the carrier gas are conveyed to the film forming chamber.