A plate-shaped component includes a transparent cover plate and a planar back element attached to the cover plate. The cover plate has a front surface facing the external environment and a back surface facing the back element. At least one surface selected from the front and back surfaces has at least one structured region, and at least one color filter layer for reflecting light within a predetermined wavelength range is arranged on the at least one surface selected from the front and back surfaces. The at least one structural region is perpendicular to the plane of the cover plate. The at least one color filter layer includes at least one refractive layer having a refractive index of greater than 2.5 in the wavelength range from 400 nm to at least 700 nm and an extinction coefficient of at least 0.2 below 450 nm and less than 0.2 above 700 nm.

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

According to one embodiment, a light detector includes a first region, a second region, and a lens group. The first region includes a plurality of elements arranged along a first direction and a second direction. The first direction and the second direction cross each other. Each of the elements includes a first semiconductor region of a first conductivity type, and a second semiconductor region located on the first semiconductor region. The second semiconductor region is of a second conductivity type. The second region is adjacent to the first region in the second direction. The second region has a different structure from the first region. The lens group is positioned on the first and second regions. The lens group includes a plurality of lenses located to correspond respectively to the elements. The first region, the second region, and the lens group are repeatedly provided in the second direction.

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Ligand-capped scattering nanoparticles, curable ink compositions containing the ligand-capped scattering nanoparticles, and methods of forming films from the ink compositions are provided. Also provided are cured films formed by curing the ink compositions and photonic devices incorporating the films. The ligands bound to the inorganic scattering nanoparticles include a head group and a tail group. The head group includes a polyamine chain and binds the ligands to the nanoparticle surface. The tail group includes a polyalkylene oxide chain.

A light pixel projection module includes a pixel light source, a light pixel projection assembly for projecting a light pixel generated by the light pixel generating assembly, and an optical time-of-flight (ToF) measurement assembly for measuring a distance between the projection module and an external object. The ToF measurement assembly includes a ToF light source, a beam splitting optical device for splitting an incident light beam into a reflected main beam component and a transmitted and attenuated secondary beam component, and an APD-based ToF photodetector for light detection. The beam splitting optical device is arranged in the optical path of light beams emitted by the ToF light source such that it splits each light beam emitted by the ToF light source into a main beam component leaving the module and heading towards the external object and a secondary beam component remaining within the module and hitting the ToF photodetector.

A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.

A semiconductor device includes a substrate, a photo sensing region, and a plurality of semiconductor plugs. The photo sensing region is in the substrate. The photo sensing region forms a p-n junction with the substrate. The semiconductor plugs extend from above the photo sensing region into the photo sensing region.

A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.

An optical filter (1a) includes a light-absorbing layer (10). The light-absorbing layer absorbs light in at least a portion of the near-infrared region. When light with a wavelength of 300 nm to 1200 nm is incident on the optical filter (1a) at incident angles of 0°, 30°, and 40°, the optical filter (1a) satisfies given transmittance requirements. IE.sub.θ1/θ2.sup.λ1 to λ2, IAE.sub.θ1/θ2.sup.λ1 to λ2, and ISE.sub.θ1/θ2.sup.λ1 to λ2 defined by the following equations (1) to (3) for two incident angles θ1° and θ2° (θ1<θ2) selected from 0°, 30°, and 40° satisfy given requirements in a given domain of a wavelength λ.