An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and a preparation method and an application thereof are provided. The detector includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiN.sub.x/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove structure, a mesa and a groove of the multiple quantum well layer are provided with a Si.sub.3N.sub.4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

Disclosed are devices for optical sensing and manufacturing method thereof. In one embodiment, a device for optical sensing includes a substrate, a photodetector and a reflector. The photodetector is disposed in the substrate. The reflector is disposed in the substrate and spaced apart from the photodetector, wherein the reflector has a reflective surface inclined relative to the photodetector that reflects light transmitted thereto to the photodetector.

An avalanche photodiode includes a silicon layer on a substrate; a germanium layer on the silicon layer; a cathode and an anode on any of the silicon layer and the germanium layer; and a plurality of contacts on the germanium layer, in addition to the cathode and the anode. The silicon layer can include a highly doped region at each end, an intrinsic doped region in a middle, and an intermediately doped region between the highly doped region at each end and the intrinsic doped region, and the cathode and the anode are each at a respective a highly doped region at each end. The germanium layer can include a plurality of highly doped regions with each including one of the plurality of contacts.

A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.

The present disclosure relates to a semiconductor packaging capable of supplying power by itself by including, as a power supply part, photovoltaic particles having a core-shell structure, wherein the photovoltaic particles in a semiconductor package generate voltage and current required for semiconductors so that the semiconductor package can be easily driven only with the power generated by itself, it is possible to overcome the restrictions on miniaturization of semiconductor packages due to connection with external power sources, and the photovoltaic particles are located between a semiconductor chip and a substrate so that the semiconductor package is easy to miniaturize.

A light-receiving device includes a light-receiving element formed on a main surface of a substrate, a light incidence surface formed on a side portion of the substrate at an acute angle or an obtuse angle with respect to the plane of the substrate and having an inclined surface forming one plane, and a lens for focusing light incident on the light-receiving element. The lens is disposed at a position where the light incident from the light incidence surface is reflected on a side of a back surface of the substrate.

An electronic device includes a substrate; a first electrode layer disposed on the substrate; a first insulating layer disposed on the first electrode layer, having a first opening to expose a surface of the first electrode layer; a connecting layer, wherein at least a portion of the connecting layer is disposed in the first opening, a sidewall exposure of the first opening is exposed, and the connecting layer is electrically connected to the first electrode layer; a second insulating layer disposed on the first insulating layer, having a second opening to expose a surface of the connecting layer; and a second electrode layer disposed on the second insulating layer, wherein at least a portion of the second electrode layer is disposed in the second opening, and is electrically connected to the connecting layer.

A light-receiving device of an embodiment of the present disclosure includes a photoelectric conversion layer that includes a first compound semiconductor with a first conductivity type and absorbs a wavelength of an infrared region, a first semiconductor layer formed on the photoelectric conversion layer, and an insulation layer formed to surround the photoelectric conversion layer and the first semiconductor layer, the first semiconductor layer having a second conductivity-type region at a middle region excluding a periphery facing the photoelectric conversion layer.

Embodiments of the present invention may utilize one or more techniques, alone or in combination, to maximize a surface area of a receiver that is configured to convert light into another form of energy. One technique enhances collection efficiency by controlling a size, shape, and/or position of a cell relative to an expected illumination profile under various conditions. Another technique positions non-active elements (such as electrical contacts and/or interconnects) on surfaces likely to be shaded from incident light by other elements of the receiver. Another technique utilizes embodiments of interconnect structures occupying a small footprint. According to certain embodiments, the receiver may be cooled by exposure to a fluid such as water or air.

Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.