The present disclosure is directed to an opto-electronic device of semiconductor material formed in a semiconductor layer of a first conductivity type having a thickness and accommodating at least one deep region of a second conductivity type. The deep region forms a PN junction with the semiconductor layer. The deep region has a depth greater than the width. The deep region is formed by a bottom portion contiguous to a first layer portion of the semiconductor layer; a surface portion contiguous to a second layer portion of the semiconductor layer; and an intermediate portion contiguous to a third layer portion. The concentration of the third layer portion is greater than that of the first and second layer portions.

A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.

A photoelectric conversion element provided in a semiconductor layer having first and second surfaces includes a first region of a first conductivity type, a second region of a second conductivity type closer to the second surface than the first region and forming a p-n junction with the first region, a third region of the first conductivity type closer to the second surface than the second region, a fourth region of the second conductivity type closer to the second surface than the third region, a fifth region of the second conductivity type between the third fourth regions, and a sixth region of the second conductivity type surrounding a region where the first, second, third, and fifth regions are disposed in a plan view. The fifth region has an area smaller than that of the third region in the plan view, and overlaps with the first region in the plan view.

A photodetector includes a photodiode that has a germanium junction formed between an n-doped region and a p-doped region. The germanium junction is formed to have an input interface at a light input end of the germanium junction. The input interface has a substantially flat shape or a convex-faceted shape. The photodetector also includes an input waveguide connected to the input interface of the germanium junction. The input waveguide has a substantially linear shape along a lengthwise centerline of the input waveguide. The input waveguide is oriented so that the lengthwise centerline of the input waveguide is positioned at a non-zero angle relative to input interface of the germanium junction.

The present disclosure relates to a semiconductor packaging capable of supplying power by itself by including, as a power supply part, photovoltaic particles having a core-shell structure, wherein the photovoltaic particles in a semiconductor package generate voltage and current required for semiconductors so that the semiconductor package can be easily driven only with the power generated by itself, it is possible to overcome the restrictions on miniaturization of semiconductor packages due to connection with external power sources, and the photovoltaic particles are located between a semiconductor chip and a substrate so that the semiconductor package is easy to miniaturize.

An electronic device includes a substrate; a first electrode layer disposed on the substrate; a first insulating layer disposed on the first electrode layer, having a first opening to expose a surface of the first electrode layer; a connecting layer, wherein at least a portion of the connecting layer is disposed in the first opening, a sidewall exposure of the first opening is exposed, and the connecting layer is electrically connected to the first electrode layer; a second insulating layer disposed on the first insulating layer, having a second opening to expose a surface of the connecting layer; and a second electrode layer disposed on the second insulating layer, wherein at least a portion of the second electrode layer is disposed in the second opening, and is electrically connected to the connecting layer.

Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

A nanowire composite structure is provided. The nanowire composite structure includes a nanowire core, wherein a material of the nanowire core includes Se, Te or a combination thereof. The nanowire composite structure also includes a metal layer covering the nanowire core. A method for forming the nanowire composite structure, a protective structure of a nanowire, a sensing device, and a method for forming a sensing device are also provided.

Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.

An apparatus and method for producing a perpetual energy harvester which harvests ambient near ultraviolet to infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester, providing a continuous source of power. Additionally, increased power output is provided through a solar harvester. The solar and thermal harvesters are physically connected but electrically isolated.