A silicon-on-insulator (SOI) substrate includes a silicon dioxide layer and a silicon layer. A detection region receives a detected optical mode coupled to an incident optical mode defined by an optical waveguide in the silicon layer. The detection region consists essentially of an intrinsic semiconductor material with a spacing structure surrounding at least a portion of the detection region, which comprises p-type, n-type doped semiconductor regions adjacent to first, second portions, respectively, of the detection region. A dielectric layer is deposited over at least a portion of the spacing structure. The silicon layer is located between the dielectric layer and the silicon dioxide layer. First, second metal contact structures are formed within trenches in the dielectric layer electrically coupling to the p-type, n-type doped semiconductor regions, respectively, without contacting any of the intrinsic semiconductor material of the detection region.

A detection device comprising: an insulating substrate; a plurality of gate lines that are provided on the insulating substrate, and extend in a first direction; a plurality of signal lines that are provided on the insulating substrate, and extend in a second direction intersecting the first direction; a switching element coupled to each of the gate lines and each of the signal lines; a first photoelectric conversion element that comprises a first semiconductor layer containing amorphous silicon, and is coupled to the switching element; and a second photoelectric conversion element that comprises a second semiconductor layer containing polysilicon, and is coupled to the switching element.

Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

A solar battery device includes a semiconductor substrate and a covering part. The semiconductor substrate has a first semiconductor region and a second semiconductor region. The first semiconductor region is a first-conductivity-type semiconductor region located on a first surface of the semiconductor substrate. The second semiconductor region is a second-conductivity-type semiconductor region different from the first-conductivity-type and located on a second surface opposite from the first surface. The covering part is located on the first surface of the semiconductor substrate. The covering part has a laminated portion in which a plurality of layers including a passivation layer and an antireflection layer are present in a laminated state. In the laminated portion, the passivation layer includes a region in which a thickness decreases from an outer peripheral portion toward a central part of the first surface.

A semiconductor substrate (1) having an active region (2) and a first surface and a second surface facing each other. A first type of passivating layer (5) is present for providing an electrical contact of a first conductivity type on a part of the first surface of the semiconductor substrate (1). A dielectric layer (4) is provided between the first type of passivating layer (5) and an active region (2) of the semiconductor substrate (1). Doping of the first conductivity type is provided in a layer (3) of the active region (2) of the semiconductor substrate (1) near the first surface. The lateral dopant level in the layer (3) of the active region (2) near the first surface is substantially uniform.

A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a semiconductor region can be formed in or above a substrate. A first metal layer can be formed over the semiconductor region. A laser can be applied over a first region of the metal layer to form a first metal weld between the metal layer and the semiconductor region, where applying a laser over the first region comprises applying the laser at a first scanning speed. Subsequent to applying the laser over the first region, the laser can be applied over a second region of the metal layer where applying the laser over the second region includes applying a laser at a second scanning speed. Subsequent to applying the laser over the second region, the laser can be applied over a third region of the metal layer to form a second metal weld, where applying the laser over the third region comprises applying the laser at a third scanning speed.

The present application relates to the technical field of solar cells, and in particular, to a method for preparing a solar cell, the solar cell, and a photovoltaic module. The method for preparing the solar cell includes: providing a substrate; forming a doped amorphous silicon layer on the first side of the substrate; performing laser treatment N times on the doped amorphous silicon layer to form N doped polysilicon layers ranging from a first doped polysilicon layer to a Nth doped polysilicon layer stacked in a direction away from the substrate, where N>1, a power, a wavelength and a pulse irradiation number of a nth laser treatment are respectively smaller than a power, a wavelength and a pulse irradiation number of a (n-1).sub.th laser treatment, where nN, and the first doped polysilicon layer is disposed closer to the substrate than the Nth doped polysilicon layer. The embodiments of the present application are conducive to simplify the process of forming the solar cell.

A semiconductor substrate, including a back surface having N-type conductive regions and P-type conductive regions. The N-type conductive regions are provided with first non-pyramidal texture structures, and the P-type conductive regions are provided with second non-pyramidal texture structures. A top surface of the first non-pyramidal texture structure is a polygonal plane, and a top surface of the second non-pyramidal texture structure is a polygonal plane. A one-dimensional size of the top surface of the first non-pyramidal texture structure is less than a one-dimensional size of the top surface of the second non-pyramidal texture structure. The one-dimensional size of the top surface of the first non-pyramidal texture structure is in a range of 5 m to 12 m. The one-dimensional size of the top surface of the second non-pyramidal texture structure is in a range of 10 m to 40 m.