Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, forming a first semiconductor region and a second semiconductor region on the back side of a substrate. A first conductive busbar can be formed above the first semiconductor region. A first portion of a second conductive busbar can be formed above the second semiconductor region. A second portion of the second conductive busbar can be formed above the second semiconductor region, where a separation region separates the second portion and the first portion of the second conductive busbar. A third conductive busbar can be formed above the first semiconductor region. A first conductive bridge can be formed above the separation region, where the first conductive bridge electrically connects the first conductive busbar to the third conductive busbar.

A method for manufacturing a solar cell, includes providing a silicon substrate, forming an oxide layer on a first surface of the silicon substrate, forming a doped polycrystalline silicon layer on the oxide layer, forming a passivation layer on the doped polycrystalline silicon layer, printing a metal paste on the passivation layer, and forming a metal contact connected to the doped polycrystalline silicon layer by firing the metal paste to penetrate the passivation layer.

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

An avalanche photodiode (APD) sensor includes a photoelectric conversion region disposed in a substrate and that converts light incident to a first side of the substrate into electric charge, and a cathode region disposed at a second side of the substrate. The second side is opposite the first side. The APD sensor includes an anode region disposed at the second side of the substrate, a first region of a first conductivity type disposed in the substrate, and a second region of a second conductivity type disposed in the substrate. The second conductivity type is different than the first conductivity type. In a cross-sectional view, the first region and the second region are between the photoelectric conversion region and the second side of the substrate. In the cross-sectional view, an interface between the first region and the second region has an uneven pattern.

Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.

A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.

A display device according to an embodiment of the present disclosure includes a display panel including a display region and a non-display region, and a sensor unit which is disposed on the display panel and includes a sensing region and a non-sensing region. The sensor unit includes a touch sensor unit which detects a touch input in the sensing region and a photo sensor unit which detects ambient illuminance.

The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of: providing a silicon-rich aluminum substrate (S0), depositing a thin layer of amorphous silicon on the substrate (S1), and applying thermal annealing (S2) to the thin layer of amorphous silicon to obtain a thin layer of crystalline silicon on the substrate.

A display device according to an embodiment of the present disclosure includes a display panel including a display region and a non-display region, and a sensor unit which is disposed on the display panel and includes a sensing region and a non-sensing region. The sensor unit includes a touch sensor unit which detects a touch input in the sensing region and a photo sensor unit which detects ambient illuminance.

Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.