A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.

PolySi:Ga/SiO.sub.2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.

Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

A method for preparing a selective emitter solar cell includes: forming a textured surface with a plurality of protrusions in the first regions and the second regions of the surface of the semiconductor substrate, wherein each protrusion has a cross-sectional shape that is trapezoidal or trapezoid-like in a thickness direction of the semiconductor substrate; performing a diffusion treatment on at least part of protrusions to form a first doped layer, and forming a first oxide layer above the first regions; re-etching the surface of the semiconductor substrate by using the first oxide layer as a mask, to etch each protrusion in the second regions to form a pyramid structure, such that the first doped layer in the second regions is etched to form a second doped layer with a doping concentration lower than a doping concentration of the first doped layer.

A drying method of a polyimide paste which can maintain a printing shape while maintaining productivity includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated, the drying method including a step of applying the polyimide paste to a surface of a base material, a step of applying a solvent including a polar material to a surface of the base material at least at a portion where the polyimide paste is applied, and a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material.

The present disclosure provides a solar cell and a method for producing same. The solar cell includes: a substrate; a first passivation film, an anti-reflection layer and at least one first electrode formed on a front surface of the substrate; and a tunneling layer, a field passivation layer and at least one second electrode formed on a rear surface. The field passivation layer includes a first field passivation sub-layer and a second field passivation sub-layer; a conductivity of the first field passivation sub-layer is greater than a conductivity of the second field passivation sub-layer, and a thickness of the second field passivation sub-layer is smaller than a thickness of the first field passivation sub-layer; either the at least one first electrode or the at least one second electrode includes a silver electrode, a conductive adhesive and an electrode film that are sequentially formed in a direction away from the substrate.

A transmitter of a wireless power transfer and data communication system comprising a transmitter system including a transmitter housing, one or more high-power laser sources, a laser controller, one or more low-power laser sources, one or more photodiodes, a beam steering system and lens assembly, and a safety system. High-power and low-power beams are directed to corresponding receivers and transceivers of a transceiver system inside a remote receiver system by the controller and the beam steering system and lens assembly. Low-power beams include optical communication to the transceiver system. The photodiodes of the transmitter system receive optical communication from the transceiver system. Low-power beams are co-propagated with and in close proximity to high-power beams substantially along an entire distance between the transmitter housing and the receiver system. The safety system instructs the controller to reduce the high-power sources in response to detected events.

A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a first emitter region over a substrate, the first emitter region having a perimeter around a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.

A versatile silicone resin reflective substrate which exhibits high reflectance of high luminance light from an LED light source over a wide wavelength from short wavelengths of approximately 340-500 nm, which include wavelengths from 380-400 nm near lower limit of the visible region, to longer wavelength in the infra-red region. The silicone resin reflective substrate has a reflective layer which contains a white inorganic filler powder dispersed in a three-dimensional cross linked silicone resin, the inorganic filler powder having a high reflective index than the silicone resin. The reflective layer is formed on a support body as a film, a solid, or a sheet. The silicone resin reflective substrate can be easily formed as a wiring substrate, a packaging case or the like, and can be manufactured at low cost and a high rate of production.