Patent classifications
H01L31/0682
Etching techniques for semiconductor devices
Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the metal seed region. The method can also include forming a metal region over the metal seed region and removing the mask. The method can include forming metal contact fingers on the semiconductor device, where the forming includes etching the first portion of the metal seed region with an etchant comprising an acid, an oxidizer and chloride ions.
Apparatus for assembly of microelectronic devices
An apparatus including a carrier substrate configured to move a microelectronic device. The apparatus further includes a rotatable body configured to receive the microelectronic device. Additionally, the apparatus includes a second substrate configured to receive the microelectronic device from the rotatable body.
SOLAR CELL AND SOLAR CELL PANEL INCLUDING SAME
The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.
Multi-junction solar cell
A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.
Solar cell having a plurality of sub-cells coupled by a metallization structure
Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of sub-cells coupled by metallization structures, are described. In an example, a solar cell, includes a plurality of sub-cells, each of the sub-cells having a singulated and physically separated semiconductor substrate portion. Adjacent ones of the singulated and physically separated semiconductor substrate portions have a groove there between. The solar cell also includes a monolithic metallization structure. A portion of the monolithic metallization structure couples ones of the plurality of sub-cells. The groove between adjacent ones of the singulated and physically separated semiconductor substrate portions exposes a portion of the monolithic metallization structure.
Multi-junction solar cell
According to one embodiment, a multi-junction solar cell includes a first solar cell, a second solar cell, and an insulating layer. The first solar cell includes a first photoelectric conversion element. The second solar cell is connected in parallel with the first solar cell. The second solar cell includes multiple second photoelectric conversion elements connected in series. The insulating layer is provided between the first solar cell and the second solar cell. The second photoelectric conversion element includes a p-electrode and an n-electrode. The p-electrode is connected to a p.sup.+-region including a surface on a side opposite to a light incident surface. The n-electrode is connected to an n.sup.+-region including the surface on the side opposite to the light incident surface. The p-electrodes oppose each other or the n-electrodes oppose each other in a region where the multiple second photoelectric conversion elements are adjacent to each other.
High photovoltaic-conversion efficiency solar cell, method for manufacturing the same, solar cell module, and photovoltaic power generation system
To Provide a back contact type solar cell with high photovoltaic-conversion efficiency which can be easily manufactured with good yield at low cost. The high photovoltaic-conversion efficiency solar cell of the present invention includes on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate: a first conductive type diffusion layer where first conductive type impurities are diffused; a second conductive type diffusion layer where second conductive type impurities are diffused; and a high resistive layer or an intrinsic semiconductor layer formed between the first conductive type diffusion layer and the second conductive type diffusion layer.
METALLIZATION OF SOLAR CELLS
Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.
INTERDIGITATED BACK CONTACT METAL-INSULATOR-SEMICONDUCTOR SOLAR CELL WITH PRINTED OXIDE TUNNEL JUNCTIONS
Screen-printable metallization pastes for forming thin oxide tunnel junctions on the back-side surface of solar cells are disclosed. Interdigitated metal contacts can be deposited on the oxide tunnel junctions to provide all-back metal contact to a solar cell.
CRYSTAL SILICON SOLAR CELL MODULE AND CELL AGGREGATE FOR CRYSTAL SILICON SOLAR CELL MODULE
Each solar cell 1 includes: a silicon substrate 2; a diffusion layer 3; a first collection electrode 4 contacting the diffusion layer 3; a first connection electrode 5 contacting the diffusion layer 3 and the first collection electrode 4; an insulation layer 7 having an opening portion extending therethrough; a second collection electrode 8 contacting the insulation layer 7 and connected to the single crystal silicon substrate 2 via the opening portion 70; and a second connection electrode 9 contacting the second collection electrode 8. The first connection electrode 5 and the second connection electrode 9 are separated from each other. The second collection electrode 8 and the single crystal silicon substrate 2 are separated from each other via the insulation layer 7 in almost all or all of an overlapping area of each two adjacent PERC solar cells 1.