An optical transducer system that has a light source and a transducer. The light source generates light that has a predetermined photon energy. The transducer has a bandgap energy that is smaller than the photon energy. An increased optical to electrical conversion efficiency is obtained by illuminating the transducer at increased optical power densities. A method of converting optical energy to electrical energy is also provided.

An optical transducer system that has a light source and a transducer. The light source generates light that has a predetermined photon energy. The transducer has a bandgap energy that is smaller than the photon energy. An increased optical to electrical conversion efficiency is obtained by illuminating the transducer at increased optical power densities. A method of converting optical energy to electrical energy is also provided.

A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics.

A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics.

An optoelectronic semiconductor device is disclosed. The optoelectronic device comprises a plurality of stacked p-n junctions. The optoelectronic semiconductor device includes a n-doped layer disposed below the p-doped layer to form a p-n layer such that electric energy is created when photons are absorbed by the p-n layer. Recesses are formed on top of the p-doped layer at the top of the plurality of stacked p-n junctions. The junctions create an offset and an interface layer is formed on top of the p-doped layer at the top of the plurality stacked p-n junctions. The optoelectronic semiconductor device also includes a window layer disposed below the plurality stacked p-n junctions. In another aspect, one or more optical filters are inserted into a multi-junction photovoltaic device to enhance its efficiency through photon recycling.

A method for producing an electronic device having a drive circuit including a solar cell structure, the method including the steps of: having a first wafer having solar cell structures on a starting substrate and a second wafer having drive circuits formed, so that either one of the first wafer or the second wafer has a plurality of independent diode circuits and capacitor-function laminated portions; obtaining a bonded wafer by bonding so that the solar cell structures, the diode circuits, the capacitor-function laminated portions, and the drive circuits are superimposed; wiring; and dicing the bonded wafer; thus creating a method for producing an electronic device including a drive circuit, a solar cell structure, and a capacitor-function portion in one chip and having a suppressed production cost; and such an electronic device.

A method of manufacturing a solar cell comprising: providing a growth substrate depositing on the growth substrate an epitaxial sequence of layers of semiconductor material forming at least a first and second solar subcells depositing a semiconductor contact layer on top of the second solar subcell depositing a reflective metal layer over said semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm depositing a contact metal layer composed on said reflective metal layer mounting and bonding a supporting substrate on top of the contact metal layer and removing the growth substrate.

Described herein are devices and methods for facet suppression in spalling of (100) GaAs by redirecting the fracture front along features created by buried nanoimprint lithography (NIL)-patterned SiO.sub.2. Successful facet suppression using patterns that result in favorable fracture along the SiO.sub.2/GaAs interface and/or through voids formed above the pattern in the coalesced layer is provided. These results allow for the design of patterns that would successfully interrupt the fracture front and suppress faceting that, combined with growth optimization, define a path forward for this technology to be used as a way to reduce the need for repreparation of the (100) GaAs substrate surface after spalling.

A method for producing a mosaic solar cell assembly, comprising the steps of singulating a III-V compound circular semiconductor solar cell wafer having a wafer surface area into four discrete solar cell mosaic elements each substantially shaped as a quadrant of a circle; selecting a first and second solar cell mosaic element each having one curved edge in the shape of an arc of the circumference of the circular wafer from which the element was singulated, and three straight edges; and rearranging and positioning the first and second mosaic elements into a substantially rectangular mosaic assembly.

A method for producing a mosaic solar cell assembly, comprising the steps of singulating a III-V compound circular semiconductor solar cell wafer having a wafer surface area into four discrete solar cell mosaic elements each substantially shaped as a quadrant of a circle; selecting a first and second solar cell mosaic element each having one curved edge in the shape of an arc of the circumference of the circular wafer from which the element was singulated, and three straight edges; and rearranging and positioning the first and second mosaic elements into a substantially rectangular mosaic assembly.