The present invention relates to a method for modifying the surface of a substrate made of electrically conductive metal oxide and notably made of ITO, comprising the following steps consisting in: (i) bringing into contact said surface with a solution containing copper ions (Cu.sup.2+) and ammonia then washing and optionally drying the surface thus obtained; and (ii) bringing into contact the surface obtained following step (i) with a solution containing sodium tetraborohydride then washing and optionally drying the surface of said conductive metal oxide substrate. The present invention relates to the use of such a method within the scope of the metallisation by copper of a conductive metal oxide substrate as well as the surfaces of a modified and metallised conductive metal oxide substrate thus obtained.

Integrated circuits described herein implement an x-input logic gate. The integrated circuit includes a plurality of Schottky diodes that includes x Schottky diodes and a plurality of source-follower transistors that includes x source-follower transistors. Each respective source-follower transistor of the plurality of source-follower transistors includes a respective gate node that is coupled to a respective Schottky diode. A first source-follower transistor of the plurality of source-follower transistors is connected serially to a second source-follower transistor of the plurality of source-follower transistors.

A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapor deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.

A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapor deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.

A multi-junction solar cell module of an embodiment includes: a first solar cell module disposed on a light incident side and including a plurality of first solar cells and a first connection wiring electrically connecting the plurality of the first solar cells; a second solar cell module including a plurality of second solar cells and a second connection wiring electrically connecting the plurality of the second solar cells; and an adhesive layer between the first solar cell module and the second solar cell module.

A multi-junction solar cell module of an embodiment includes: a first solar cell module disposed on a light incident side and including a plurality of first solar cells and a first connection wiring electrically connecting the plurality of the first solar cells; a second solar cell module including a plurality of second solar cells and a second connection wiring electrically connecting the plurality of the second solar cells; and an adhesive layer between the first solar cell module and the second solar cell module.

A photovoltaic (“PV”) module may comprise an array of freeform micro-optics and an array of PV cells. The PV module may be a flat panel with a nominal thickness smaller than the length and width of the flat panel. An array of lenses may be embedded in an array substrate. The lenses may be coupled to light pipes. The lenses may concentrate light through the light pipes to multi-junction cells. Diffuse light may be transferred through the array substrate to a silicon cell. The lenses and light pipes may be manufactured using a molding and drawing process.