A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

A method for manufacturing a large-area thin film solar cell includes the steps of: (a) forming a first contact layer on a substrate; (b) forming a multi-layer metal precursor film on the first contact layer, which includes the sub-steps of (b1) sputtering a first multinary metal precursor layer on the first contact layer, the first multinary metal precursor layer containing Cu, Ga and KF, and (b2) sputtering an In-containing precursor layer on the first multinary metal precursor layer; and (c) subjecting the multi-layer metal precursor film to selenization to form an absorber layer having a chalcopyrite phase.

Disclosed herein is a quantum dot composite that can maintain luminous efficiency per unit quantum dot even when a quantum dot concentration is high, and therefore can achieve a high emission intensity. The quantum dot composite includes: a matrix; and quantum dots dispersed in the matrix, wherein the matrix is composed of cellulose acetate having a compositional distribution index (CDI) of 3.0 or less, and a concentration of the quantum dots is 0.05 wt % or higher.

Disclosed herein is a quantum dot composite that can maintain luminous efficiency per unit quantum dot even when a quantum dot concentration is high, and therefore can achieve a high emission intensity. The quantum dot composite includes: a matrix; and quantum dots dispersed in the matrix, wherein the matrix is composed of cellulose acetate having a compositional distribution index (CDI) of 3.0 or less, and a concentration of the quantum dots is 0.05 wt % or higher.

Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.

Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.

Photovoltaic structures are disclosed. The structures can comprise randomly or periodically structured layers, a dielectric layer to reduce back diffusion of charge carriers, and a metallic layer to reflect photons back towards the absorbing semiconductor layers. This design can increase efficiency of photovoltaic structures. The structures can be fabricated by nanoimprint.

Photovoltaic structures are disclosed. The structures can comprise randomly or periodically structured layers, a dielectric layer to reduce back diffusion of charge carriers, and a metallic layer to reflect photons back towards the absorbing semiconductor layers. This design can increase efficiency of photovoltaic structures. The structures can be fabricated by nanoimprint.

A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV.sub.2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.

A thin-film solar cell comprising a substrate, a first electrode layer arranged upon the substrate, a p-type light absorption layer formed by a group I-III-IV.sub.2 compound arranged upon the first electrode layer, and an n-type second electrode layer arranged upon the p-type light absorption layer. The p-type light absorption layer includes Cu as a group 1 element and includes Ga and In as group III elements. The ratio of the atomic number between Cu and the group III elements in the entire p-type light absorption layer is lower than 1.0; the ratio of the atomic number between Ga and the group III elements in the surface on the second electrode layer side is no more than 0.13; and the ratio of the atomic number between Cu and the group III elements in the surface on the second electrode layer side is at least 1.0.