An electrical transmission system has solar electrical generation stations mounted directly to existing utility poles along a transmission line. Solar panels and securing brackets define each solar electric generation station. Each station has at least one generally East facing panel, at least one generally South facing panel, and at least one generally West facing panel. A power coupling conducts electricity generated by the solar electric generation station into the transmission lines. In one embodiment, a plurality of spacer members support the separate and distinct solar collector surfaces in a fixed position relative to the utility pole and have a plurality of clamp passages. A plurality of clamps pass through the clamp passages to guide and retain the clamps. In another embodiment, a plurality of adjustable brackets affix with the spacer members adjacent a first end and to the utility pole adjacent a second end distal to the first end.

An electrical transmission system has solar electrical generation stations mounted directly to existing utility poles along a transmission line. Solar panels and securing brackets define each solar electric generation station. Each station has at least one generally East facing panel, at least one generally South facing panel, and at least one generally West facing panel. A power coupling conducts electricity generated by the solar electric generation station into the transmission lines. In one embodiment, a plurality of spacer members support the separate and distinct solar collector surfaces in a fixed position relative to the utility pole and have a plurality of clamp passages. A plurality of clamps pass through the clamp passages to guide and retain the clamps. In another embodiment, a plurality of adjustable brackets affix with the spacer members adjacent a first end and to the utility pole adjacent a second end distal to the first end.

Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd.sub.1-xMn.sub.xTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd.sub.1-xMn.sub.xTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

A photovoltaic module and a method for producing such modules is presented in which the resistance of the interconnects between neighboring photovoltaic cells is minimized and the dead-area is also minimized. This is achieved by routing the interconnects, in form of a finger, from a top contact of a first photovoltaic cell to a bottom contact of a second photovoltaic cell. The interconnect is isolated from the bottom contact of the first photovoltaic cell by means of the photovoltaic stack and the interconnect is connected to the bottom contact of the second photovoltaic cell in an opening of the photovoltaic stack.

A photovoltaic module and a method for producing such modules is presented in which the resistance of the interconnects between neighboring photovoltaic cells is minimized and the dead-area is also minimized. This is achieved by routing the interconnects, in form of a finger, from a top contact of a first photovoltaic cell to a bottom contact of a second photovoltaic cell. The interconnect is isolated from the bottom contact of the first photovoltaic cell by means of the photovoltaic stack and the interconnect is connected to the bottom contact of the second photovoltaic cell in an opening of the photovoltaic stack.

A photoelectric conversion element having a photoelectric conversion layer formed between a first electrode layer and a second electrode layer, in which the photoelectric conversion layer contains Cu and Ag, which are Group I elements, In and Ga, which are Group III elements, and Se and S, which are Group VI elements. A portion at which a minimum value of a band gap appears in a thickness direction of the photoelectric conversion layer is included in the intermediate region. When a ratio of a mole amount of Ag to a sum of mole amounts of the Group I elements other than Ag, the Group III elements, and the Group VI elements is defined as an Ag concentration, a portion at which a maximum value of the Ag concentration appears in the thickness direction of the photoelectric conversion layer is included in the intermediate region.

A photoelectric conversion element having a photoelectric conversion layer formed between a first electrode layer and a second electrode layer, in which the photoelectric conversion layer contains Cu and Ag, which are Group I elements, In and Ga, which are Group III elements, and Se and S, which are Group VI elements. A portion at which a minimum value of a band gap appears in a thickness direction of the photoelectric conversion layer is included in the intermediate region. When a ratio of a mole amount of Ag to a sum of mole amounts of the Group I elements other than Ag, the Group III elements, and the Group VI elements is defined as an Ag concentration, a portion at which a maximum value of the Ag concentration appears in the thickness direction of the photoelectric conversion layer is included in the intermediate region.

According to the embodiment, there is provided a solar cell including: a back electrode layer; a light absorbing layer on the back electrode layer; a buffer layer on the light absorbing layer; and a front electrode layer on the buffer layer, wherein the front electrode layer comprises an intrinsic region and a doping region having a conductive dopant, and a concentration of the conductive dopant is gradually lowered in upward and downward directions from an excess doping region of the doping region.

According to the embodiment, there is provided a solar cell including: a back electrode layer; a light absorbing layer on the back electrode layer; a buffer layer on the light absorbing layer; and a front electrode layer on the buffer layer, wherein the front electrode layer comprises an intrinsic region and a doping region having a conductive dopant, and a concentration of the conductive dopant is gradually lowered in upward and downward directions from an excess doping region of the doping region.