A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a polycrystalline or amorphous substrate. An electrically conductive Ion Beam-Assisted Deposition (IBAD) template layer is positioned above the substrate. At least one electrically conductive hetero-epitaxial buffer layer is positioned above the IBAD template layer. The at least one buffer layer has a resistivity of less than 100 cm. The semiconductor device and method foster the use of bottom electrodes thereby avoiding complex and expensive lithography processes.

Photovoltaic devices such as solar cells having one or more field-effect hole or electron inversion/accumulation layers as contact regions are configured such that the electric field required for charge inversion and/or accumulation is provided by the output voltage of the photovoltaic device or that of an integrated solar cell unit. In some embodiments, a power source may be connected between a gate electrode and a contact region on the opposite side of photovoltaic device. In other embodiments, the photovoltaic device or integrated unit is self-powering.

Photovoltaic devices such as solar cells having one or more field-effect hole or electron inversion/accumulation layers as contact regions are configured such that the electric field required for charge inversion and/or accumulation is provided by the output voltage of the photovoltaic device or that of an integrated solar cell unit. In some embodiments, a power source may be connected between a gate electrode and a contact region on the opposite side of photovoltaic device. In other embodiments, the photovoltaic device or integrated unit is self-powering.

Organic-inorganic hybrid perovskite (OIHP) based photo-responsive devices include an OIHP active layer disposed between a cathode layer and an anode layer, and an electron extraction layer disposed between the cathode layer and the active layer. The electron extraction layer includes a layer of C.sub.60 directly disposed on the active layer. The active layer includes an organometal trihalide perovskite layer (e.g., CH.sub.3NH.sub.3PbI.sub.2X, where X includes at least one of Cl, Br, or I).

Organic-inorganic hybrid perovskite (OIHP) based photo-responsive devices include an OIHP active layer disposed between a cathode layer and an anode layer, and an electron extraction layer disposed between the cathode layer and the active layer. The electron extraction layer includes a layer of C.sub.60 directly disposed on the active layer. The active layer includes an organometal trihalide perovskite layer (e.g., CH.sub.3NH.sub.3PbI.sub.2X, where X includes at least one of Cl, Br, or I).

This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.