Nanocomposites in accordance with many embodiments of the invention can be capable of converting electromagnetic radiation to an electric signal, such as signals in the form of current or voltage. In some embodiments, metallic nanostructures are integrated with graphene material to form a metallo-graphene nanocomposite. Graphene is a material that has been explored for broadband and ultrafast photodetection applications because of its distinct optical and electronic characteristics. However, the low optical absorption and the short carrier lifetime of graphene can limit its use in many applications. Nanocomposites in accordance with various embodiments of the invention integrates metallic nanostructures, such as (but not limited to) plasmonic nanoantennas and metallic nanoparticles, with a graphene-based material to form metallo-graphene nanostructures that can offer high responsivity, ultrafast temporal responses, and broadband operation in a variety of optoelectronic applications.

We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors, where the array size is at least 3 by 3 or larger, and there are tracks embedded within the membrane layers to separate each element of the array, the tracks also acting as heatsinks and/or cold junction regions.

We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors, where the array size is at least 3 by 3 or larger, and there are tracks embedded within the membrane layers to separate each element of the array, the tracks also acting as heatsinks and/or cold junction regions.

Embodiments are directed to a chalcogenide material-based filterless color image sensor, which includes a substrate, a first chalcogenide material layer formed on a substrate for a first color, a second chalcogenide material layer formed on the first chalcogenide material layer for a second color, and a third chalcogenide material layer formed on the second chalcogenide material layer for a third color.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

A photogate photodetector (10) comprising: a first electrode consisting of amorphous germanium (12) covered with transition metal species having a thickness in the range of 0.1-5 nm (11); a second electrode (14) which is an n-type silicon layer; and a dielectric layer (13) arranged between the first and second electrode; with a depletion layer (15) formed in the n-type silicon layer (14) at the interface to the dielectric layer (13).

A photogate photodetector (10) comprising: a first electrode consisting of amorphous germanium (12) covered with transition metal species having a thickness in the range of 0.1-5 nm (11); a second electrode (14) which is an n-type silicon layer; and a dielectric layer (13) arranged between the first and second electrode; with a depletion layer (15) formed in the n-type silicon layer (14) at the interface to the dielectric layer (13).

One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency.

Aspects of the subject disclosure may include, for example, a photo detecting device that includes a bottom gate, a bilayer semiconductor formed on the bottom gate, and a top gate above the bilayer semiconductor comprising a polymer electrolyte. Other embodiments are disclosed.

Aspects of the subject disclosure may include, for example, a photo detecting device that includes a bottom gate, a bilayer semiconductor formed on the bottom gate, and a top gate above the bilayer semiconductor comprising a polymer electrolyte. Other embodiments are disclosed.