A compact collision detector can be configured for low power operation to facilitate collision avoidance. In one embodiment, a nanoscale collision detector can be based on a photodetector, stacked on top of a non-volatile and programmable memory architecture that imitates the escape response of LGMD neuron at a frugal energy expenditure of few nanojoules (nJ) and at the same time can offer orders of magnitude benefit in device footprint (e.g. by having a relatively small size). Embodiments of the collision detector can be utilized in smart, low-cost, task-specific, energy efficient and miniaturized collision detection systems configured for collision avoidance.

A compact collision detector can be configured for low power operation to facilitate collision avoidance. In one embodiment, a nanoscale collision detector can be based on a photodetector, stacked on top of a non-volatile and programmable memory architecture that imitates the escape response of LGMD neuron at a frugal energy expenditure of few nanojoules (nJ) and at the same time can offer orders of magnitude benefit in device footprint (e.g. by having a relatively small size). Embodiments of the collision detector can be utilized in smart, low-cost, task-specific, energy efficient and miniaturized collision detection systems configured for collision avoidance.

The present disclosure discloses an infrared sensor, an infrared gas detector and an air quality detection device. The infrared sensor includes electrodes, a substrate, an isolation layer and a graphene film. The graphene film has a periodical nanostructure. The infrared sensor enhances the absorption of infrared light, and is capable of only absorbing specific infrared wavelengths, thus improving the selective performance of the infrared gas detector.

A photodetector comprising an optical waveguide structure comprising at least three stripes spaced from one another such that a slot is present between each two adjacent stripes of the at least three stripes. A graphene absorption layer is provided over or underneath the at least three stripes. There is an electrode for each stripe, over or underneath the graphene absorption layer. The photodetector is configured such that two adjacent electrodes are biased using opposite polarities to create a p-n junction effect in a portion of the graphene absorption layer. In particular the portion of the graphene absorption layer is located over or underneath each respective slot between said each two adjacent stripes.

A photodetector comprising an optical waveguide structure comprising at least three stripes spaced from one another such that a slot is present between each two adjacent stripes of the at least three stripes. A graphene absorption layer is provided over or underneath the at least three stripes. There is an electrode for each stripe, over or underneath the graphene absorption layer. The photodetector is configured such that two adjacent electrodes are biased using opposite polarities to create a p-n junction effect in a portion of the graphene absorption layer. In particular the portion of the graphene absorption layer is located over or underneath each respective slot between said each two adjacent stripes.

A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) which comprises or is formed by two waveguide segments (12a, 12b), which extend at least substantially parallel to one another in the longitudinal direction and are preferably distanced from one another in the transverse direction, forming a gap (14) between them; and an active element (13), which overlies the longitudinal portion (12) of the waveguide and comprises at least one material or consists of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption, the two waveguide segments (12a, 12b) each being in contact, at least in some portions, on at least one side, in particular on the side facing the active element (14), with a gate electrode (15a, 15b) which preferably comprises silicon or consists of silicon.

The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) which comprises or is formed by two waveguide segments (12a, 12b), which extend at least substantially parallel to one another in the longitudinal direction and are preferably distanced from one another in the transverse direction, forming a gap (14) between them; and an active element (13), which overlies the longitudinal portion (12) of the waveguide and comprises at least one material or consists of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electric photosignal as a result of the absorption, the two waveguide segments (12a, 12b) each being in contact, at least in some portions, on at least one side, in particular on the side facing the active element (14), with a gate electrode (15a, 15b) which preferably comprises silicon or consists of silicon.

In an embodiment, a photodetector is provided that provides a sensitizing medium adapted to receive electromagnetic radiation creating a junction with a transport channel, wherein the transport channel is adapted to exhibit a change in conductivity in response to reception of electromagnetic radiation by the sensitizing medium.

In an embodiment, a photodetector is provided that provides a sensitizing medium adapted to receive electromagnetic radiation creating a junction with a transport channel, wherein the transport channel is adapted to exhibit a change in conductivity in response to reception of electromagnetic radiation by the sensitizing medium.