An image acquisition device includes an imager including a light receiver, a light shield, a light condenser, and a light emitter. The light shield includes a light transmitting substrate, a light shielding layer, and an opening in the light shielding layer. A light transmitting layer having a refractive index smaller than that of the substrate is between the light condenser and the light shield. When a diameter of a light receiving surface of the light reception element is d, a diameter of the opening is a, a pitch of the light reception elements is p, a refractive index of the light transmitting layer is n1, a refractive index of the substrate is n2, and a distance between the light reception element and the light shielding layer is h, Arctan((p-a/2-d/2)/h)≧Arcsin(n1/n2).

A photosensor including first and second conductive layers disposed on a main surface and a back surface of a substrate is provided. A conductive via layer is disposed between the conductive layers. A light emitting element and an integrated circuit (IC) including a light receiving element are mounted on the first conductive layer. The photosensor includes a translucent covering member that covers the light emitting element and the IC together with the first conductive layer. The covering member includes a groove between the light emitting element and the IC in a plan view. The first conductive layer includes a first mounting portion on which the light emitting element is mounted and a second mounting portion on which the IC is mounted. The light emitting device is electrically connected to the IC via the first mounting portion, the conductive via layer, the second conductive layer and the second mounting portion.

Disclosed is a package structure and a method for manufacturing the same. The package structure comprises: a lead frame; a first light sensor being electrically coupled to the lead frame; a light emitter separated from the first light sensor and being electrically coupled to the lead frame; a first plastic body in which a trench is formed; and a photoresist layer located on a side surface of the first plastic body, wherein the first plastic body is separated by the trench into a first portion covering the light emitter and a second portion covering the first light sensor, the first portion of the first plastic body has the side surface facing the first light sensor. The photoresist layer prevents the light with a specific wavelength from passing through and avoids the influence to the normal operation of the light sensor, so that the anti-interference capacity of the light sensor is ensured and the size of package structure is reduced while the light sensor is integrated.

A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).

A method for fabricating a plurality of Time-of-Flight sensor devices (1) comprises a step of providing a wafer (100) including a plurality of wafer portions (110) for a respective one of the Time-of-Flight sensor devices (1), wherein each of the wafer portions (110) includes a first light detecting area (10) and a second light detecting area (20) and a respective light emitter device (30). The respective light emitter device (30) and the respective first light detecting area (10) is encapsulated by a first volume (40) of a light transparent material (130), and the respective second light detecting area (20) is encapsulated by a second volume (50) of the light transparent material (130). Before singulation of the devices (1), an opaque material (60) is placed on the wafer portions (110) in a space (120) between the respective first and second volume (40, 50) of the light transparent material (130).

An electrical power converter can include a plurality of layers disposed on a substrate. An emitter, including a first semiconductor junction that is formed at an interface between a first pair of adjacent layers, can produce light in response to a first electrical signal. An absorber, including a second semiconductor junction that is formed at an interface between a second pair of adjacent layers, can absorb at least some of the light. Circuitry can produce a second electrical signal in response to the absorbed light. The second electrical signal can be substantially proportional to the first electrical signal and can be electrically isolated from the first electrical signal. Because the light can remain within the layers during use, the electrical power converter can have a higher efficiency than a comparable device that propagates the light through at least one interface between air and a semiconductor material.

An electrical power converter can include a plurality of layers disposed on a substrate. An emitter, including a first semiconductor junction that is formed at an interface between a first pair of adjacent layers, can produce light in response to a first electrical signal. An absorber, including a second semiconductor junction that is formed at an interface between a second pair of adjacent layers, can absorb at least some of the light. Circuitry can produce a second electrical signal in response to the absorbed light. The second electrical signal can be substantially proportional to the first electrical signal and can be electrically isolated from the first electrical signal. Because the light can remain within the layers during use, the electrical power converter can have a higher efficiency than a comparable device that propagates the light through at least one interface between air and a semiconductor material.

An optical sensor module includes: (1) a lid defining a first chamber and a second chamber isolated from the first chamber; (2) a light emitting component disposed within the first chamber; and (3) a light sensing component disposed within the second chamber; wherein the lid includes a capping substrate and a top of the first chamber and a top of the second chamber are demarcated by the capping substrate, wherein the capping substrate defines a first penetrating hole at the top of the first chamber and a first runner connecting a side wall of the first penetrating hole, and wherein a first lens or a first transmissive panel is formed or disposed in the first penetrating hole and has an extension formed or disposed in the first runner connecting the side wall of the first penetrating hole.

An optical sensor module includes: (1) a lid defining a first chamber and a second chamber isolated from the first chamber; (2) a light emitting component disposed within the first chamber; and (3) a light sensing component disposed within the second chamber; wherein the lid includes a capping substrate and a top of the first chamber and a top of the second chamber are demarcated by the capping substrate, wherein the capping substrate defines a first penetrating hole at the top of the first chamber and a first runner connecting a side wall of the first penetrating hole, and wherein a first lens or a first transmissive panel is formed or disposed in the first penetrating hole and has an extension formed or disposed in the first runner connecting the side wall of the first penetrating hole.

One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to an optical sensor that includes a substrate and a sensor die. A through-hole extends through the substrate, and a trench is formed in a first surface of the substrate and is in fluid communication with the through-hole. The sensor die is attached to the first surface of the substrate and covers the first through-hole and a first portion of the trench. A second portion of the trench is left uncovered by the sensor die.