One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to an optical sensor that includes a substrate and a sensor die. A through-hole extends through the substrate, and a trench is formed in a first surface of the substrate and is in fluid communication with the through-hole. The sensor die is attached to the first surface of the substrate and covers the first through-hole and a first portion of the trench. A second portion of the trench is left uncovered by the sensor die.

A light-emitting-and-receiving element module 1 comprises a substrate 2 that comprises a top surface 2a; a light-emitting element 3a on the top surface 2a of the substrate 2; a light-receiving element 3b on the top surface 2a of the substrate 2 and apart from the light-emitting element 3a; and an intermediate wall 5 between the light-emitting element 3a and the light-receiving element 3b, the intermediate wall 5 comprising a lower surface 5c disposed apart from the top surface 2a. The lower surface 5c of the intermediate wall 5 has a protruding shape.

A complex optical proximity sensor includes a substrate, a light emitter coupled to the substrate, an application-specific integrated circuit chip coupled to the substrate with a proximity sensor thereon, a barrier disposed between the application-specific integrated circuit chip and the light emitter, and an ambient light detection chip manufactured in advance and then coupled to the application-specific integrated circuit chip thereon with a pre-determined height. Also, with the manufacturing method of the complex optical proximity sensor, the detection angle of the ambient light is thereby maximized and the one of the proximity sensor is thereby minimized.

A time of flight system may include one or more microLEDs and a photodetector monolithically integrated with integrated circuitry of the time of flight system. The microLEDs may be doped to provide increased speed of operation.

Embodiments of the present invention provide a compound optical filter device comprising a semiconductor substrate having an optical transducer formed on the semiconductor substrate, the optical transducer responsive to light to produce a signal or responsive to a signal to emit light. An optical filter comprises a filter substrate separate and independent from the semiconductor substrate and one or more optical filter layers disposed on the filter substrate. The filter substrate is micro-transfer printed on or over the semiconductor substrate or on layers formed over the semiconductor substrate and over the optical transducer to optically filter the light to which the optical transducer is responsive or to optically filter the light emitted by the optical transducer. In further embodiments, the optical filter is an interference filter and the semiconductor substrate includes active components that can control or operate the optical transducer.

A semiconductor module includes a light emitting element, a semiconductor element including a light receptor circuit disposed to receive light from the light emitting element, a light-transmissive insulating body disposed between the light emitting element and the semiconductor element, at least one of a first surface thereof facing the semiconductor element and a second surface thereof facing the light emitting element including a ragged region, a first light-transmissive bonding resin formed between the light emitting element and the light-transmissive insulating body, and a second light-transmissive bonding resin formed between the semiconductor element and the light-transmissive insulating body.

A semiconductor module includes a light emitting element, a semiconductor element including a light receptor circuit disposed to receive light from the light emitting element, a light-transmissive insulating body disposed between the light emitting element and the semiconductor element, at least one of a first surface thereof facing the semiconductor element and a second surface thereof facing the light emitting element including a ragged region, a first light-transmissive bonding resin formed between the light emitting element and the light-transmissive insulating body, and a second light-transmissive bonding resin formed between the semiconductor element and the light-transmissive insulating body.

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

The invention relates to a SLED device emitting light from a substrate side, configured to suppress lasing, and comprising a reflective element (55) on a front surface of a substrate (22) configured to redirect an optical beam (light) onto a back surface of the substrate (22). In one embodiment the device can be used for making a compact RGB (red-green-blue) projector.