Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

An LED may be optimized for high speed operation for optical communication systems in a variety of ways. The LED, which may be a microLED, may include dopants and dopant levels allowing for increased speed of operation, the LED may include interlayers, and the LED may include other features.

Methods and systems for improving the yield of laser ablation of semiconductor devices, such as micro-LEDs, in a direct transfer method are described. In the disclosed embodiments, an ablation layer is used to mask a nucleation layer on a donor substrate, with an aperture provided to allow epitaxial growth of a semiconductor structure. The aperture size is selected as the minimum necessary to ensure proper epitaxial growth. Layers disposed above the ablation layer may have larger apertures to that a portion of the semiconductor structure stem overlies the ablation layer, allowing a greater force generated during the ablation process to be directed against the semiconductor structure, improving the likelihood of separation of the structure from the donor substrate. Other embodiments are described.

To fabricate a practically useful non-polar AlN buffer layer on a sapphire crystal plate and manufacture a UV light-emitting device on a non-polar crystal substrate by adopting the crystal substrate as an example, an embodiment of the present invention provides a crystal substrate 1D comprising an r-plane sapphire crystal plate 10 and an AlN buffer layer 20D of non-polar orientation. The AlN buffer layer comprises a surface protection layer 22 and a smoothing layer 26. The surface protection layer suppresses roughness increase on a surface of the AlN buffer layer, and the smoothing layer makes the surface of the AlN buffer layer a smoothed surface. Also provided is a crystal substrate 11 comprising an AlN buffer layer 20T to which a dislocation blocking layer 24 for reducing crystallographic defects is added between the surface protection layer 22 and the smoothing layer 26. In another embodiment a deep UV light-emitting device is provided.

Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

A method for preparing a crystalline semiconductor layer in order for the layer to be provided with a specific lattice parameter involves a relaxation procedure that is applied for a first time to a first start donor substrate in order to obtain a second donor substrate. Using the second donor substrate as the start donor substrate, the relaxation procedure is repeated for a number of times that is sufficient for the lattice parameter of the relaxed layer to be provided with the specific lattice parameter. A set of substrates may be obtained by the method.

A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

A method of producing microelectronic components includes forming a functional layer system; applying a laminar carrier to the functional layer system; attaching a workpiece to a workpiece carrier; utilizing incident radiation of a laser beam is focused in a boundary region between a growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed; separating a functional layer stack from the growth substrate, wherein a vacuum gripper having a sealing zone that circumferentially encloses an inner region is applied to the reverse side of the growth substrate, a negative pressure is generated in the inner region such that separation of the functional layer stack from the growth substrate is initiated in the inner region; and the growth substrate held on the vacuum gripper is removed from the functional layer stack.

A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.