A stacked III-V semiconductor diode having an n.sup.+-layer with a dopant concentration of at least 10.sup.19 N/cm.sup.3, an n.sup.-layer with a dopant concentration of 10.sup.12-10.sup.16 N/cm.sup.3, a layer thickness of 10-300 microns, a p.sup.+-layer with a dopant concentration of 510.sup.18-510.sup.20 cm.sup.3, with a layer thickness greater than 2 microns, wherein said layers follow one another in the sequence mentioned, each comprising a GaAs compound. The n.sup.+-layer or the p.sup.+-layer is formed as the substrate and a lower side of the n.sup.-layer is materially bonded with an upper side of the n.sup.+-layer, and a doped intermediate layer is arranged between the n-layer and the p+-layer and materially bonded with an upper side and a lower side.

The invention relates to a method for producing an optoelectronic semiconductor chip (100) comprising the steps: A) providing a surface (2) in a chamber (5), B) providing at least one organic first precursor (3) and one second precursor (4) in the chamber (5), wherein the organic first precursor (3) comprises a gaseous III-compound material (3), wherein the second precursor (4) comprises a gaseous phosphorus-containing compound material (41), C) epitaxial deposition of the first and the second precursor (3, 4) at a temperature between 540 C. inclusive and 660 C. inclusive and a pressure between 30 mbar inclusive and 300 mbar inclusive onto the surface (2) in the chamber (5) to form a first layer (12), comprising a phosphide compound semiconductor material (6), wherein the ratio between the second and the first precursor (3, 4) is between 5 inclusive and 200 inclusive, wherein the phosphide compound semiconductor material (6) produced is doped with carbon, wherein the carbon doping concentration is at least 410.sup.19 cm.sup.3.

The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.

Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer substantially does not contain aluminum.

A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

A laser or light emitter for operation at a cryogenic temperature includes a single quantum well layer, an n-type barrier layer directly on a first surface of the single quantum well layer, and a p-type barrier layer directly on a second surface of the single quantum well layer opposite the first surface of the single quantum well layer. The single quantum well layer is between the p-type barrier layer and the n-type barrier layer and the compositions of the n-type barrier layer and the p-type barrier layer are graded.