A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 m or more and 0.7 m or less, and the skewness Rsk of the surface is a positive value.

A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer. The first nitride semiconductor layer includes a first indium content, a first aluminum content and a first conductivity-type dopant. The second nitride semiconductor layer includes a second indium content, a second aluminum content and a second conductivity-type dopant. The electron blocking structure includes a first semiconductor layer including a third indium content and a third aluminum content; wherein the third indium content is greater than the second indium content.

In an embodiment a method includes providing a growth substrate layer, depositing a first doped [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z carrier transport layer on the substrate layer with x in a range of [0.5;1] along a growth direction, and depositing an active region along the growth direction, the active region for generating radiation and comprising a plurality of alternating [(Al.sub.aGa.sub.1-a).sub.bIn.sub.1-b].sub.cP.sub.1-c quantum well layers and [(Al.sub.dGa.sub.1-d).sub.eIn.sub.1-e].sub.fP.sub.1-f barrier layers, wherein a is in a range of [0;0.5] and d is in a range of [0.45;1.0], wherein depositing of at least one of the barrier layer and/or the quantum well layer comprises doping with a dopant having a concentration in a range of 1e.sup.15 atoms/cm.sup.3 to 5e.sup.17 atoms/cm.sup.3, wherein the dopant is selected from at least one of the group consisting of Mg, Zn, Te and Si or depositing a second doped carrier transport [(Al.sub.xGa.sub.1-x).sub.yIn.sub.1-y].sub.zP.sub.1-z layer with x in a range of [0.45;1] along the growth direction.

A micro light-emitting diode structure includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, and a base layer stacked with each other. A width of the light-emitting layer is greater than that of the first-type semiconductor layer and that of the second-type semiconductor layer. A width of the base layer is at least greater than that of the second-type semiconductor layer. A manufacturing method of the micro light-emitting diode structure by mixing dry etching and wet etching. The manufacturing method not only reduces the time that the semiconductor layers are in contact with the etching solution in the wet etching process to increase the etching stability, but avoids the dangling bond effect on the sidewall caused by the dry etching. Therefore, a combination of the advantages of the two etchings further increases the external quantum efficiency.

An infrared LED having a monolithic and stacked structure, having an n-doped base substrate, which includes GaAs, a lower cladding layer, an active layer for generating infrared radiation, an upper cladding layer, a current distribution layer and an upper contact layer. The layers being preferably disposed in the specified order. A first tunnel diode is disposed between the upper cladding layer and the current distribution layer, and the current distribution layer predominantly including an n-doped, Ga-containing layer having a Ga content>1%.

A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.010.sup.16/cm.sup.3 and less than or equal to 1.010.sup.18/cm.sup.3. Thus, the semiconductor light-emitting device may have increased light output and reliability.

The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: a first mirror (102, 202, 302, 402, 502), a first conductive layer (103, 203, 303, 403, 503), a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, the first mirror is electrically conductive, and the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.

A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer includes a first n-type semiconductor sub-layer, a second n-type semiconductor sub-layer, and an ohmic contact layer. The ohmic contact layer is disposed between the first n-type semiconductor sub-layer and the second n-type semiconductor sub-layer. The first metal electrode is disposed on the first n-type semiconductor sub-layer. A region of the first n-type semiconductor sub-layer located between the first metal electrode and the ohmic contact layer contains metal atoms diffusing from the first metal electrode, so as to form ohmic contact between the first metal electrode and the ohmic contact layer.

An AlGaInP light-emitting diode includes from bottom up a substrate, a DBR reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.