A micro-device structure includes a substrate having a substrate surface and a substrate contact disposed on or in the substrate surface, a cavity extending into the substrate from the substrate surface, a micro-device disposed in the cavity, the micro-device comprising a micro-device contact, a planarization layer disposed over at least a portion of the substrate, and an electrode disposed at least partially over or on the planarization layer and electrically connected to the micro-device contact.

A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.

Die stacks and methods of making die stacks with very thin dies are disclosed. The die surfaces remain flat within a 5 micron tolerance despite the thinness of the die and the process steps of making the die stack. A residual flux height is kept below 50% of the spacing distance between adjacent surfaces or structures, e.g. in the inter-die spacing.

A method of manufacturing an electronic device, comprising: providing a carrier substrate with a plurality of light-emitting units disposed thereon, the plurality of light-emitting units being spaced with a first pitch (P1) in a first direction and a second pitch (P2) in a second direction that is perpendicular to the first direction; providing a driving substrate; and transferring at least a portion of the plurality of light-emitting units to the driving substrate to form a transferred portion of the plurality of light-emitting units on the driving substrate, the transferred portion being spaced with a third pitch (P3) in a third direction and a fourth pitch (P4) in a fourth direction that is perpendicular to the third direction; wherein the first pitch (P1), the second pitch (P2), the third pitch (P3), and the fourth pitch (P4) are satisfied following relations: P3=mP1; and P4=nP2, m and n are positive integers.

A method of forming a bipolar transistor with a vertical collector contact requires providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate, and providing a host substrate. A metal collector contact is patterned on the top surface of the host substrate, and the plurality of epitaxial semiconductor layers is transferred from the first substrate onto the metal collector contact on the host substrate. The first substrate is suitably the growth substrate for the plurality of epitaxial semiconductor layers. The host substrate preferably has a higher thermal conductivity than does the first substrate, which improves the heat dissipation characteristics of the transistor and allows it to operate at higher power densities. A plurality of transistors may be transferred onto a common host substrate to form a multi-finger transistor.

A photosensitive transfer material including a temporary support and a transfer layer including a photosensitive layer, in which a transmittance of the photosensitive layer to light having a wavelength of 365 nm is 0.1% to 30% or a transmittance of the photosensitive layer to light having a wavelength of 405 nm is 0.05% to 30%.

A photosensitive transfer material including a temporary support and a transfer layer including a photosensitive layer, in which the photosensitive layer has infrared curing properties, and a transmittance of the photosensitive layer to light having a wavelength of 830 nm is 0.1% or more.

A photosensitive transfer material for an LED array, including a temporary support and a transfer layer including a photosensitive layer, in which an L* value of a surface of the photosensitive layer on a temporary support side, which is measured by an SCE method, is 5.0 or less.

A method for transferring a plurality of die operatively associated with a transfer apparatus to a glass substrate to form a circuit component. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.

A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.