An electronic package includes a carrier, a protection layer and an electronic component. The carrier includes a dielectric layer and a pad in contact with the dielectric layer. The protection layer at least partially covers the pad. The electronic component is located over the protection layer and electrically connected to the pad. At least one portion of the protection layer under the electronic component is substantially conformal with a profile of the pad or with a profile of the dielectric layer.

A method for manufacturing a semiconductor element includes preparing a semiconductor wafer that includes a substrate including a Ga.sub.2O.sub.3-based semiconductor and an epitaxial layer including a Ga.sub.2O.sub.3-based semiconductor and located on the substrate, fixing the epitaxial layer side of the semiconductor wafer to a support substrate, thinning the substrate of the semiconductor wafer fixed to the support substrate, after the thinning of the substrate, forming an electrode on a lower surface of the substrate, bonding or forming a support metal layer on a lower surface of the electrode of the semiconductor wafer, and dicing the semiconductor wafer into individual pieces, thereby obtaining plural semiconductor elements each including the support metal layer. Thermal conductivity of the support metal layer is higher than thermal conductivity of the substrate.

Disclosed is a micro light-emitting component, a micro light-emitting diode, and a transfer layer. The transfer layer has a recess for receiving the micro light-emitting diode to permit the micro light-emitting diode to be retained by the transfer layer, and is transformable from a first state, in which the transfer layer is deformed by the micro light-emitting diode to form the recess, to a second state, in which the micro light-emitting diode received in the recess is retained by the transfer layer. Also disclosed are micro light-emitting component matrix and a method for manufacturing the micro light-emitting component matrix.

Gate-all-around integrated circuit structures having a doped subfin, and methods of fabricating gate-all-around integrated circuit structures having a doped subfin, are described. For example, an integrated circuit structure includes a subfin structure having well dopants. A vertical arrangement of horizontal semiconductor nanowires is over the subfin structure. A gate stack is surrounding a channel region of the vertical arrangement of horizontal semiconductor nanowires, the gate stack overlying the subfin structure. A pair of epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal semiconductor nanowires.

A displaying apparatus includes a pixel unit. The pixel unit includes at least one pixel having a light emitting device and a light conversion layer for converting a first wavelength of light of the light emitting device into a second wavelength of light different from the first wavelength; and an insulation layer covers side surfaces of the light emitting device and the light conversion layer.

A stacked semiconductor device includes a cooling structure to increase the cooling efficiency of the stacked semiconductor device. The cooling structure includes various types of cooling components integrated into the stacked semiconductor device that are configured to remove and/or dissipate heat from dies of the stacked semiconductor device. In this way, the cooling structure reduces device failures and permits the stacked semiconductor device to operate at greater voltages, greater speeds, and/or other increased performance parameters by removing and/or dissipating heat from the stacked semiconductor device.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

The invention relates to an embodiment in which the textile component comprises at least one flexible thread that can be woven. A plurality of semiconductor columns are attached in or on the thread and are configured to generate radiation. Furthermore, a plurality of electrical lines are located in or on the thread, by means of which lines the semiconductor columns are electrically contacted. An average height (H) of the semiconductor columns in a direction transverse to a longitudinal direction (L) of the thread is at most 20% of an average diameter (D) of the thread.

A method for manufacturing a semiconductor device according to an aspect of the present disclosure includes a step of preparing a dicing/die-bonding integrated film including an adhesive layer formed of a heat-curable resin composition having a melt viscosity of 3100 Pa.Math.s or higher at 120° C., a tacky adhesive layer, and a base material film; a step of sticking a surface on the adhesive layer side of the dicing/die-bonding integrated film and a semiconductor wafer together; a step of dicing the semiconductor wafer; a step of expanding the base material film and thereby obtaining adhesive-attached semiconductor elements; a step of picking up the adhesive-attached semiconductor element from the tacky adhesive layer; a step of laminating this semiconductor element to another semiconductor element, with the adhesive interposed therebetween; and a step of heat-curing the adhesive.