A method includes forming a seed layer on a semiconductor wafer, coating a photo resist on the seed layer, performing a photo lithography process to expose the photo resist, and developing the photo resist to form an opening in the photo resist. The seed layer is exposed, and the opening includes a first opening of a metal pad and a second opening of a metal line connected to the first opening. At a joining point of the first opening and the second opening, a third opening of a metal patch is formed, so that all angles of the opening and adjacent to the first opening are greater than 90 degrees. The method further includes plating the metal pad, the metal line, and the metal patch in the opening in the photo resist, removing the photo resist, and etching the seed layer to leave the metal pad, the metal line and the metal patch.

A method of manufacturing a semiconductor device including providing a die, forming a pad on the die, disposing a first polymer over the die, patterning the first polymer with an opening over the pad, disposing a sacrificial layer over the patterned first polymer, disposing a molding surrounding the die, removing a portion of the molding thereby exposing the sacrificial layer, removing the sacrificial layer thereby exposing the pad and the first polymer, disposing a second polymer on the first polymer, patterning the second polymer with the opening over the pad, and disposing a conductive material on the pad within the opening.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method of manufacturing a semiconductor device comprising forming interconnection structures by at least part performing a lateral plating process, and a semiconductor device manufactured thereby.

A semiconductor device includes a semiconductor die. The semiconductor die includes a device layer, an interconnect layer over the device layer, a conductive pad over the interconnect layer, a conductive seed layer directly on the conductive pad, and a passivation layer encapsulating the conductive pad and the conductive seed layer. The conductive pad is between the interconnect layer and the conductive seed layer.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

A semiconductor package, and a method of manufacturing thereof, comprising a contact in a plated sidewall encapsulant opening, substantially as shown in and/or described in connection with at least one of the figures, as set forth more completely in the claims.

An integrated circuit packaging system and method of manufacture thereof including: providing a substrate; forming contact pads on top of the substrate; forming a protection layer on top of the contact pads and the substrate; exposing the contact pads from the protection layer; printing under bump metallization (UBM) layers over the exposed contact pads extended over the protection layer with conductive inks; and forming bumps on top of the under bump metallization layers. It also including: printing an adhesion layer using conductive ink, wherein the adhesion layer comprises interconnected adhesion layer pads; forming additional under bump metallization (UBM) layers and bumps on top of the adhesion layer pads utilizing an electro-deposition process; and removing connections among the interconnected adhesion layer pads.

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes an interconnect structure on a substrate; a passivation layer disposed on the interconnect structure; a first via, a second via and a third via disposed in the passivation layer and connected to the interconnect structure, each of the first, second and third vias has an elongated shape longitudinally oriented along a first direction; and a first pad longitudinally oriented along the first direction and landing on the first, second and third vias.