A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes an underlying semiconductor layer, an insulation layer, a first through semiconductor via, a second through semiconductor via, and an upper conductive connecting portion. The insulation layer is disposed over the underlying semiconductor layer. The first through semiconductor via extends continuously through the insulation layer. The first through semiconductor via has a first upper end above the insulation layer. The second through semiconductor via extends continuously through the insulation layer. The second through semiconductor via has a second upper end above the insulation layer. The upper conductive connecting portion is laterally connected to a first upper lateral surface of the first upper end and a second upper lateral surface of the second upper end.

A method for packaging a chip and a chip packaging structure. A passivation layer is provided on bonding pads of a wafer, a first metal bonding layer is formed on the passivation layer, and a second metal bonding layer is formed on a substrate. The substrate and the wafer are bonded via the first metal bonding layer and the second metal bonding layer, and are packaged as a whole. A first shielding layer is provided on the substrate, and the first shielding layer is in contact with the second metal bonding layer. After the wafer and the substrate are bonded, the wafer is subject to half-cutting to expose the first metal bonding layer. Then, the second shielding layer electrically connected to the first metal bonding layer is formed.

A display device includes a base layer including an upper base layer and a lower base layer on a rear surface of the upper base layer; at least one light emitting element on a surface of the upper base layer; and at least one pad on the rear surface of the upper base layer and including a first pad layer adjacent to the upper base layer and a second pad layer adjacent to the lower base layer. The second pad layer includes indium zinc oxide (IZO).

The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.

The present application discloses a method for fabricating semiconductor device with a stress relief structure. The method includes providing a substrate, forming an intrinsically conductive pad above the substrate, and forming a stress relief structure above the substrate and distant from the intrinsically conductive pad.

In some embodiments, the present disclosure relates to a device that includes an interconnect structure arranged on a frontside of a substrate. The interconnect structure includes interconnect conductive structures embedded within interconnect dielectric layers. A trench extends completely through the substrate to expose multiples ones of the interconnect conductive structures. A bond pad structure is arranged on a backside of the substrate and extends through the trench of the substrate to contact the multiple ones of the interconnect conductive structures. A bonding structure is arranged on the backside of the substrate and electrically contacts the bond pad structure.

A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

In some examples, a package comprises a semiconductor die and a bond pad formed upon the semiconductor die. The bond pad has a protrusion on a top surface of the bond pad. The package also comprises a metal contact and a bond wire coupled to the protrusion and to the metal contact.

A device comprises a first chip comprising a first connection pad embedded in a first dielectric layer and a first bonding pad embedded in the first dielectric layer, wherein the first bonding pad comprises a first portion and a second portion, the second portion being in contact with the first connection pad and a second chip comprising a second bonding pad embedded in a second dielectric layer of the second chip, wherein the first chip and the second chip are face-to-face bonded together through the first bonding pad the second bonding pad.