A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.

A semiconductor device includes a semiconductor die. The semiconductor die includes a device layer, an interconnect layer over the device layer, a conductive pad over the interconnect layer, a conductive seed layer directly on the conductive pad, and a passivation layer encapsulating the conductive pad and the conductive seed layer. The conductive pad is between the interconnect layer and the conductive seed layer.

A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.

A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.

Mechanisms for forming a semiconductor device are provided. The semiconductor device includes a contact pad over a substrate. The semiconductor device also includes a passivation layer over the substrate and a first portion of the contact pad, and a second portion of the contact pad is exposed through an opening. The semiconductor device further includes a post-passivation interconnect layer over the passivation layer and coupled to the second portion of the contact pad. In addition, the semiconductor device includes a bump over the post-passivation interconnect layer and outside of the opening. The semiconductor device also includes a diffusion barrier layer physically insulating the bump from the post-passivation interconnect layer while electrically connecting the bump to the post-passivation interconnect layer.

A method is provided for producing at least one electrical via in a substrate, the method comprising: producing a protective layer over a component structure which has been produced or is present on a front side of the substrate; forming at least one contact hole which extends from a surface of a backside of the substrate to a contact surface of the component structure; forming a metal-containing and thus conductive lining in the at least one contact hole creating a hollow electrically conductive structure in the at least one contact hole; and applying a passivation layer over the backside of the substrate, the passivation layer spanning over the hollow electrically conductive structure for forming the at least one electrical via. Also provided is a micro-technical component comprising at least one electrical via.

A method is provided for producing at least one electrical via in a substrate, the method comprising: producing a protective layer over a component structure which has been produced or is present on a front side of the substrate; forming at least one contact hole which extends from a surface of a backside of the substrate to a contact surface of the component structure; forming a metal-containing and thus conductive lining in the at least one contact hole creating a hollow electrically conductive structure in the at least one contact hole; and applying a passivation layer over the backside of the substrate, the passivation layer spanning over the hollow electrically conductive structure for forming the at least one electrical via. Also provided is a micro-technical component comprising at least one electrical via.

A semiconductor device includes a substrate including, on a surface thereof, a first conductive pad and a first insulating layer formed around the first conductive pad, a semiconductor chip including, on a surface thereof, a second conductive pad and a second insulating layer around the second conductive pad, an intermediate layer formed between the substrate and the semiconductor chip, and including a conductive portion between the first and second conductive pads, and an insulating portion between the first and second insulating layers, and a molecular bonding layer formed between the substrate and the intermediate layer, and including at least one of a first molecular portion covalently bonded to a material of the first conductive pad and a material of the conductive portion, and a second molecular portion covalently bonded to a material of the first insulating layer and a material of the insulating portion.

A semiconductor device includes a base, a semiconductor chip on the base, a conductive bonding layer between a surface of the base and a surface of the semiconductor chip, the conductive bonding layer including a resin and a plurality of conductive particles contained in the resin, and a molecular bonding layer between the surface of the semiconductor chip and a surface of the conductive bonding layer, and including a molecular portion covalently bonded to a material of the semiconductor chip and a material of the conductive bonding layer.

A semiconductor device having a composite pad including a primary portion and a subsidiary portion is disclosed. The primary portion is provided for electrical connection to an internal circuit of the semiconductor device. The subsidiary portion is provided for probing, in particular, for testing high frequency performance of the semiconductor device by probing with a RF-probe. Because the subsidiary portion is independent from the primary portion, the subsidiary portion does not affect the electrical performance of the semiconductor device. Also, the subsidiary portion has a narrowed contact area with respect to the RF-probe to lessen adherence of metal flakes from the pad onto the probe.