A semiconductor package assembly includes a carrier with a die attach surface and a contact pad separated from the die attach surface, a semiconductor die mounted on the die attach surface, the semiconductor die having a front side metallization that faces away from the die attach surface, an interconnect ribbon attached to the semiconductor die and the contact pad such that the interconnect ribbon electrically connects the front side metallization to the contact pad, and an electrically insulating encapsulant body that encapsulates the semiconductor die and at least part of the interconnect ribbon. The interconnect ribbon includes a layer stack of a first metal layer and a second layer formed on top of the first metal layer. The first metal layer includes a different metal as the second metal layer. The first metal layer faces the front side metallization.

A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A semiconductor package includes: a substrate structure having a first surface and an opposite second surface; a semiconductor chip on the first surface; and a connection bump on the second surface. The substrate structure includes: interconnection patterns disposed at different levels relative to the second surface; connection vias connecting the interconnection patterns; and a passivation layer covering a portion of the interconnection patterns and having an opening. The interconnection patterns include a first pattern and a second pattern, wherein the first pattern and the second pattern are adjacent to the second surface, and wherein a side surface of the first pattern faces a side surface of the second pattern. The second pattern includes a pad pattern and a metal layer in contact with the pad pattern and the connection bump. The first pattern has a first thickness and the second pattern has a pad thickness that is greater than the first thickness.

A transistor includes a source contact connected to a Through-Silicon Via (TSV). A drain contact is connected to a first pad. A gate structure is interposed between the source contact and the drain contact. A second pad is connected to the gate structure, the second pad comprising a first side diametrically opposed to a second side, and a third side interposed therebetween, the source contact proximal to the third side, a first portion of the first side and a second portion of the second side.

An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

A semiconductor package may include: a substrate; a first sub-semiconductor package disposed over the substrate, the first sub-semiconductor package including a first buffer chip and a first memory chip; and a second memory chip disposed over the first sub-semiconductor package, wherein the first buffer chip and the first memory chip are connected to each other using a first redistribution line, and wherein the first buffer chip and the second memory chip are connected to each other using a second bonding wire.

A semiconductor package includes a substrate including an upper pad at a top surface of the substrate, a semiconductor chip on the substrate and including a chip pad at a top surface of the semiconductor chip, a connecting structure on the semiconductor chip and including a connecting pad at a top surface of the connecting structure and electrically connected to the upper pad, an encapsulant covering the substrate, the semiconductor chip, and the connecting structure, and a test terminal on the connecting structure and extending through the encapsulant. The connecting structure electrically interconnects the semiconductor chip and the test terminal.

In one embodiment, methods for making semiconductor devices are disclosed.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.