A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

Devices and techniques include process steps for forming openings through stacked and bonded structures. The openings are formed by pre-etching through one or more layers of prepared dies after planarization of the bonding layer (by chemical-mechanical polishing (CMP) or the like) and prior to bonding. For instance, the openings are etched through one or more layers of dies to be bonded prior to bonding the dies to form an assembly.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. The first barrier is arranged in the intermediate layer and spaced apart from the attachment layer in the first direction. The second barrier is arranged in the intermediate layer, is spaced apart from the first surface in the first direction, and is spaced apart from the first barrier in a second direction. The third barrier extends from the first barrier to the second barrier in the second direction.

The present disclosure provides a semiconductor structure including a substrate; a redistribution layer (RDL) disposed over the substrate, and including a dielectric layer over the substrate, a conductive plug extending within the dielectric layer, and a bonding pad adjacent to the conductive plug and surrounded by the dielectric layer; and a conductive bump disposed over the conductive plug, wherein the bonding pad is at least partially in contact with the conductive plug and the conductive bump. Further, a method of manufacturing the semiconductor structure is also provided.

The present disclosure is directed to embodiments of a conductive structure on a conductive layer, which may be a conductive damascene layer of a semiconductor device or package. The conductive damascene layer may be within a substrate of the semiconductor device or package. A crevice is present between one or more sidewalls of the conductive structure and one or more sidewalls of one or more insulating layers on the substrate and extends to a surface of the conductive layer. A sealing layer is formed in the crevice that seals the conductive layer from moisture and contaminants external to the semiconductor device or package that may enter the crevice. In other words, the sealing layer stops the moisture and contaminants from reaching the conductive layer such that the conductive layer does not corrode due to exposure to the moisture and contaminants.

A semiconductor device includes a bypass wiring connected with a first through via and a second through via, on a second surface side of a semiconductor substrate that is an opposite side of a wiring structure formed on a first surface side of the semiconductor substrate.

Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.

A physical quantity sensor includes a substrate, an acceleration sensor mounted on the substrate, an integrated circuit mounted on the substrate and stacked with the acceleration sensor, and serial communication wirings provided to the substrate. In a plan view of the acceleration sensor element, a bonding wire connecting the acceleration sensor element to the integrated circuit is disposed on an opposite side to the serial communication wirings with respect to a virtual central line of the acceleration sensor element.

Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.