A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.

A method comprises embedding a semiconductor structure in a molding compound layer, depositing a plurality of photo-sensitive material layers over the molding compound layer, developing the plurality of photo-sensitive material layers to form a plurality of openings, wherein a first portion and a second portion of an opening of the plurality of openings are formed in different photo-sensitive material layers and filling the first portion and the second portion of the opening with a conductive material to form a first via in the first portion and a first redistribution layer in the second portion.

Embodiments of the present disclosure are directed towards an integrated circuit (IC) package including a first die at least partially embedded in a first encapsulation layer and a second die at least partially embedded in a second encapsulation layer. The first die may have a first plurality of die-level interconnect structures disposed at a first side of the first encapsulation layer. The IC package may also include a plurality of electrical routing features at least partially embedded in the first encapsulation layer and configured to route electrical signals between a first and second side of the first encapsulation layer. The second side may be disposed opposite to the first side. The second die may have a second plurality of die-level interconnect structures that may be electrically coupled with at least a subset of the plurality of electrical routing features by bonding wires.

Disclosed are a system-on-chip integrated packaging structure, a manufacturing method therefor and a three-dimensional stacked device. The system-on-chip integrated packaging structure includes: a substrate, a chip, a first electrical connection structure and a second electrical connection structure. A front surface of the substrate is provided with a recess and a via welding pad, and a back surface of the substrate is provided with a conductive via extending to the via welding pad. The chip is embedded in the recess, and a chip welding pad is disposed on a surface of the chip away from a bottom surface of the recess. Different chips may be electrically connected by means of the first electrical connection structure and the second electrical connection structure, which is conducive to form a three-dimensional stacked structure with high-density interconnection, miniaturized packaging and thinning.

The present disclosure relates to a radio frequency (RF) device that includes a mold device die and a multilayer redistribution structure underneath the mold device die. The mold device die includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion over the BEOL portion, and a first mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The first mold compound resides over the active layer without silicon crystal, which has no germanium content, in between. The multilayer redistribution structure includes redistribution interconnections and a number of bump structures that are at bottom of the multilayer redistribution structure and electrically coupled to the mold device die via the redistribution interconnections.

A method includes forming an interconnect component including a plurality of dielectric layers that include an organic dielectric material, and a plurality of redistribution lines extending into the plurality of dielectric layers. The method further includes bonding a first package component and a second package component to the interconnect component, encapsulating the first package component and the second package component in an encapsulant, and precutting the interconnect component using a blade to form a trench. The trench penetrates through the interconnect component, and partially extends into the encapsulant. The method further includes performing a singulation process to separate the first package component and the second package component into a first package and a second package, respectively.

Disclosed are semiconductor packages and their fabricating methods. The semiconductor package includes a lower structure and an upper redistribution layer. The lower structure includes a first bump layer, a lower redistribution layer, a semiconductor chip, a molding layer, a conductive pillar, and an under pad layer. The upper redistribution layer includes a second bump layer and second redistribution layers. The first redistribution layer includes a lower redistribution pattern including a first line part and a first via part. A width of the first via part increases in a direction toward the first line part from a bottom surface of the first via part. The second redistribution layer includes an upper redistribution pattern including a second line part and the second via part. A width of the second via part increases in a direction toward the second line part from a top surface of the second via part.

What is disclosed is a module arrangement. An antenna device and at least one electronic component are arranged next to each other and within one plane between a top side and a bottom side of the module arrangement. A shielding device which has a shielding effect relative to electromagnetic signals is located between the antenna device and the electronic component. Additionally, a method for manufacturing a module arrangement is disclosed.

The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.