A semiconductor device includes a first lead, a second lead, a control element, an insulating element, and a driver element. The control element and insulating element are mounted on a first pad portion of the first lead, while the driver element on a second pad portion of the second lead. In plan view, the first pad portion has a first edge adjacent to the second pad portion in a first direction and extending in a second direction perpendicular to the first direction. The first edge has first and second ends opposite in the second direction. The second pad portion has a second edge adjacent to the first edge and extending in the second direction. The second edge has third and fourth ends opposite in the second direction. One of the third and fourth end is located between the first and second end in the second direction.

A bonding structure and a manufacturing method therefor. A first hybrid bonding structure is formed on a first wafer; an interconnection structure and a second hybrid bonding structure are formed on the front surface of a second wafer. The first wafer and the second wafer are bonded by means of the first hybrid bonding structure and the second hybrid bonding structure, a gasket electrically connected to the interconnection structure is formed on the back surface of the second wafer, and the interconnection structure below the gasket and a second conductive bonding pad in the second hybrid bonding structure are provided in a staggered manner in the horizontal direction. According to the solution, the interconnection structure and the second conductive bonding pad are arranged in a staggered manner, so that recesses generated by structural stacking are avoided, and device failure caused by the recesses is further avoided.

A semiconductor package may include: a base layer; first to Nth semiconductor chips (N is a natural number of 2 or more) sequentially offset stacked over the base layer so that a chip pad portion of one side edge region is exposed, wherein the chip pad portion includes a chip pad and includes a redistribution pad that partially contacts the chip pad and extends away from the chip pad; and a bonding wire connecting the chip pad of a kth semiconductor chip among the first to Nth semiconductor chips to the redistribution pad of a k−1th semiconductor chip or a k+1th semiconductor chip when k is a natural number greater than 1 and the bonding wire connecting the chip pad of the kth semiconductor chip to a pad of the base layer or the redistribution pad of the k−1th semiconductor chip when k is 1.

In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing reduced height semiconductor packages for mobile electronics. For instance, there is disclosed in accordance with one embodiment a stacked die package having therein a bottom functional silicon die; a recess formed within the bottom functional silicon die by a thinning etch partially reducing a vertical height of the bottom functional silicon die at the recess; and a top component positioned at least partially within the recess formed within the bottom functional silicon die. Other related embodiments are disclosed.

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package includes a redistribution substrate that includes an organic dielectric layer and a metal pattern in the organic dielectric layer, and a semiconductor chip on the redistribution substrate. The organic dielectric layer has a maximum absorbance equal to or greater than about 0.04 at a first wavelength range, and a fluorescence intensity equal to or greater than about 4×10.sup.3 at the first wavelength range. The first wavelength range is about 450 nm to about 650 nm.

A multilayer wiring structure in which a plurality of conductive films and a plurality of interlayer dielectric films are laminated is formed so as to cover a main surface of a first semiconductor chip. The conductive films include conductive films to which a low voltage is applied and conductive films to which a high voltage is applied. The conductive films to which the low voltage is applied are located below the conductive films to which the high voltage is applied and closer to the main surface of a semiconductor substrate. The conductive films are arranged as conductive films of at least one layer between a first inductor to which the low voltage is applied and a second inductor to which the high voltage is applied.

A semiconductor device includes a first chip and a second chip bonded to the first chip. The first chip includes: a substrate; a logic circuit disposed on the substrate; and a plurality of first dummy pads that are disposed above the logic circuit, are disposed on a first bonding surface where the first chip is bonded to the second chip, the plurality of first dummy pads not being electrically connected to the logic circuit. The second chip includes a plurality of second dummy pads disposed on the plurality of first dummy pads and a memory cell array provided above the plurality of second dummy pads. A coverage of the first dummy pads on the first bonding surface is different between a first region and a second region, the first region separated from a first end side of the first chip, the second region disposed between the first end side and the first region.

A semiconductor device of an embodiment includes a first chip having a memory cell array, and a second chip having a control circuit. The first chip includes a substrate, a pad, a first structural body, and a second structural body. The substrate is arranged on the side opposite to a joined face of the first chip joined to the second chip, and includes a first face, a second face, and an opening extending from the second face to the first face in a first region. The memory cell array is provided between the first face and the opposed joined face. The pad is provided in the opening. The first structural body is provided between the first face and the joined face, and is electrically connected to the pad. The second structural body is provided between the first face and the joined face in the first region.

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.