A conductive ball includes a copper ball, a nickel layer formed with being patterned on an outer surface of the copper ball, and a tin-based solder covering each outer surface of the copper ball and the nickel layer.

A semiconductor package device includes a passivation layer, a conductive element, a redistribution layer (RDL) and an electronic component. The passivation layer has a first surface and second surface opposite to the first surface. The conductive element is within the passivation layer. The conductive element defines a recess facing the second surface of the passivation layer. The RDL is on the passivation layer and electrically connected with the conductive element. The electronic component is disposed on the RDL and electrically connected with the RDL.

An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is provided that includes a first substrate containing first circuitry, a first contact pad, a first pillar, a first pillar protection layer, a second substrate containing second circuitry, and a solder ball disposed on the first pillar and electrically and mechanically coupling the first substrate to the second substrate. The first contact pad is disposed on the first substrate and coupled to the first circuitry. The first pillar electrically disposed over the first contact pad. The first pillar protection layer is hydrophobic to solder and is disposed on a side surface of the first pillar.

A method for manufacturing a semiconductor device includes at least the following three steps. A step (A) of preparing a structure including a semiconductor wafer having a circuit-formed surface and an adhesive film attached to the circuit-formed surface side of the semiconductor wafer. A step (B) of back grinding a surface on a side opposite to the circuit-formed surface side of the semiconductor wafer. A step (C) of radiating ultraviolet rays to the adhesive film and then removing the adhesive film from the semiconductor wafer. In addition, as the adhesive film, an adhesive film having a base material layer, an antistatic layer, and an adhesive resin layer including a conductive additive in this order is used, and the adhesive film is used so that the adhesive resin layer faces the circuit-formed surface side of the semiconductor wafer.

A multi-layer semiconductor structure includes a first semiconductor structure and a second semiconductor structure, with at least one of the first and second semiconductor structures provided as a superconducting semiconductor structure. The multi-layer semiconductor structure also includes one or more interconnect structures. Each of the interconnect structures is disposed between the first and second semiconductor structures and coupled to respective ones of interconnect pads provided on the first and second semiconductor structures. Additionally, each of the interconnect structures includes a plurality of interconnect sections. At least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material.

A display apparatus including a circuit board, at least one LED stack configured to emit light, electrode pads disposed on the at least one LED stack and electrically connected to the at least one LED stack, and electrodes disposed on the electrode pads and electrically connected to the electrode pads, respectively, in which each of the electrodes has a fixed portion that is fixed to one of the electrode pads and an extending portion that is spaced apart from the one of the electrode pads, and the electrodes include at least two metal layers having different thermal expansion coefficients from each other.

A method for manufacturing an integrated circuit package includes depositing a first layer of metal at a location of a first metal post that is for connecting an IC die to an external circuit. The method also includes depositing a second layer of metal at the location of the first metal post, and a first layer of metal at a location of a second metal post that is for connecting the IC die to an external circuit.

An interconnect structure for a semiconductor device includes a plurality of unit cells. Each unit cell is formed of interconnected conducting segments. The plurality of unit cells forms a conducting lattice.

An interconnect structure for a semiconductor device includes a plurality of unit cells. Each unit cell is formed of interconnected conducting segments. The plurality of unit cells forms a conducting lattice.

A method for manufacturing a semiconductor device includes: supplying a resist to a first surface of a semiconductor element having a plurality of electrode pads to cover the electrode pad surfaces; opening the resist on the electrode pad surfaces to expose the electrode pad surfaces from the resist; curing the resist by applying light or heat to the resist; forming bump electrodes on the electrode pad surfaces by filling a plating solution into the openings of the resist; and peeling the resist from the first surface of the semiconductor element.