Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.

A semiconductor structure includes a first substrate, a metallic pad disposed over the first substrate, a dielectric structure disposed over the first substrate and exposing a portion of the metallic pad, a bonding structure disposed over and electrically connected to the metallic pad, a barrier ring surrounding the bonding structure, and a through-hole penetrating the first substrate and the dielectric structure. The bonding structure includes a bottom and a sidewall, the bottom of the bonding structure is in contact with the metallic pad, a first portion of the sidewall of the bonding structure is in contact with the dielectric structure, and a second portion of the sidewall of the bonding structure is in contact with the barrier ring.

A method for manufacturing a semiconductor device includes: supplying a resist to a first surface of a semiconductor element having a plurality of electrode pads to cover the electrode pad surfaces; opening the resist on the electrode pad surfaces to expose the electrode pad surfaces from the resist; curing the resist by applying light or heat to the resist; forming bump electrodes on the electrode pad surfaces by filling a plating solution into the openings of the resist; and peeling the resist from the first surface of the semiconductor element.

A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core.

A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core.

A manufacturing process of an element chip comprises steps of preparing a substrate including a plurality of dicing regions and element regions each containing a plurality of convex and concave portions, holding the substrate and a frame with a holding sheet, forming a protective film by applying a first mixture to form a coated film above the substrate and by drying the coated film to form the protective film along the convex and concave portions, the first mixture containing a first resin and an organic solvent having a vapor pressure higher than water, removing the protective film by irradiating a laser beam thereon to expose the substrate in the dicing regions, plasma-etching the substrate along the dicing regions while maintaining the protective film in the element regions to individualize the substrate, and removing the protective film by contacting the protective film with an aqueous rinse solution.

Provided is a method of manufacturing a bump structure, the method including a first step for preparing a wafer including a plurality of chips each including a die pad, an under bump metal (UBM) layer on the die pad, and a bump pattern on the UBM layer, a second step for attaching a backgrinding film to an upper surface of the wafer, a third step for grinding a rear surface of the wafer by a certain thickness, a fourth step for forming a flexible material layer on a second rear surface of the wafer after being ground, and then attaching dicing tape including a ring frame, to the flexible material layer, a fifth step for removing the backgrinding film and then performing a curing process to harden the flexible material layer, and a sixth step for performing a dicing process to cut the plurality of chips into individual chips.

Embodiments relate to the design of a device capable of increasing the electrical performance of an interconnect feature by amplifying the current carrying capacity of an interconnect feature. The device comprises a first body comprising a first surface with at least one nanoporous conductive structure protruding from the first surface. The device further comprises a second body comprising a second surface with arrays of nanofibers extending from the second surface and penetrating into corresponding nanoporous conductive structures to form conductive pathways between the first body and the second body.

Embodiments relate to the design of a device capable of increasing the electrical performance of an interconnect feature by amplifying the current carrying capacity of an interconnect feature. The device comprises a first body comprising a first surface with at least one nanoporous conductive structure protruding from the first surface. The device further comprises a second body comprising a second surface with arrays of nanofibers extending from the second surface and penetrating into corresponding nanoporous conductive structures to form conductive pathways between the first body and the second body.

A defect may occur in which as the amount of fluid discharged by a fluid discharge device decreases, a mask is not filled with the fluid even when the fluid is discharged. In order to fill a workpiece with the fluid, it is necessary to replace air in the workpiece corresponding to a discharge part with the fluid. The air in the workpiece is removed in advance, thereby filling the workpiece with the discharged fluid. A fluid discharge device in which, at one end of a discharge head, a suction port for sucking air in the mask on the workpiece, and a fluid discharge device having a discharge nozzle formed thereon for discharging the fluid are formed is used.