A microelectronic device has a bump bond structure including an electrically conductive pillar with an expanded head, and solder on the expanded head. The electrically conductive pillar includes a column extending from an I/O pad to the expanded head. The expanded head extends laterally past the column on at least one side of the electrically conductive pillar. In one aspect, the expanded head may have a rounded side profile with a radius approximately equal to a thickness of the expanded head, and a flat top surface. In another aspect, the expanded head may extend past the column by different lateral distances in different lateral directions. In a further aspect, the expanded head may have two connection areas for making electrical connections to two separate nodes. Methods for forming the microelectronic device are disclosed.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A chip package and a chip packaging method are provided. The package includes: a chip to be packaged, a reinforcing layer and solder bumps. The chip to be packaged includes a first surface and a second surface opposite to each other, the first surface includes a sensing region and first contact pads, and the first contact pads are electrically coupled to the sensing region. The reinforcing layer covers the first surface of the chip to be packaged. The solder bumps are provided on the second surface of the chip to be packaged. The solder bump is electrically connected to the first contact pad and is configured to electrically connect with an external circuit.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

The present disclosure provides a method for preparing a semiconductor package having a standard size from a die having a size smaller than the standard size. The method includes: providing a wafer; forming a die on the wafer, wherein the die has a size smaller than one-half of a standard size 0201; dicing the die from the wafer; encapsulating the die to form an encapsulated die; and singulating the encapsulated die to form a semiconductor package having a size equal to or larger than the standard size 0201.

The present disclosure provides a method for preparing a semiconductor package having a standard size from a die having a size smaller than the standard size. The method includes: providing a wafer; forming a die on the wafer, wherein the die has a size smaller than one-half of a standard size 0201; dicing the die from the wafer; encapsulating the die to form an encapsulated die; and singulating the encapsulated die to form a semiconductor package having a size equal to or larger than the standard size 0201.

A wafer level chip packaging method, comprising: 1) providing a carrier and forming a bonding layer on a surface of the carrier; 2) forming a dielectric layer on a surface of the bonding layer; 3) attaching each of semiconductor chips, with its front face facing down, to a surface of the dielectric layer; 4) packaging each of the semiconductor chips by using an injection molding process; 5) separating the bonding layer and the dielectric layer to remove the carrier and the bonding layer; 6) forming a redistribution layer for the semiconductor chips based on the dielectric layer; and 7) performing a reballing reflow process on the redistribution layer to form micro bumps. As a result, contamination in the semiconductor chips from the packaging process is greatly controlled, thereby improving the rate of finished products and the electrical property of the semiconductor chips.

A wafer level chip packaging method, comprising: 1) providing a carrier and forming a bonding layer on a surface of the carrier; 2) forming a dielectric layer on a surface of the bonding layer; 3) attaching each of semiconductor chips, with its front face facing down, to a surface of the dielectric layer; 4) packaging each of the semiconductor chips by using an injection molding process; 5) separating the bonding layer and the dielectric layer to remove the carrier and the bonding layer; 6) forming a redistribution layer for the semiconductor chips based on the dielectric layer; and 7) performing a reballing reflow process on the redistribution layer to form micro bumps. As a result, contamination in the semiconductor chips from the packaging process is greatly controlled, thereby improving the rate of finished products and the electrical property of the semiconductor chips.

An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.