An integrated circuit (IC) package, comprising a substrate that comprises a bridge die embedded within a dielectric. A first die comprising a first input/output (I/O) transmitter and a second die comprising a second I/O receiver and electrically coupled to the bridge die. A first signal trace and a first power conductor are within the bridge die. The first signal trace and the first power conductor are electrically coupled to the first I/O transmitter and the second I/O receiver. The first signal trace is to carry a digital signal and the first power conductor to provide a voltage for the second I/O receiver to read the digital signal.

Disclosed is a semiconductor package comprising a first semiconductor chip and at least one second semiconductor chip on the first semiconductor chip. The second semiconductor chip includes first and second test bumps that are adjacent to an edge of the second semiconductor chip and are on a bottom surface of the second semiconductor chip. The first and second test bumps are adjacent to each other. The second semiconductor chip also includes a plurality of data bumps that are adjacent to a center of the second semiconductor chip and are on the bottom surface of the second semiconductor chip. A first interval between the second test bump and one of the data bumps is greater than a second interval between the first test bump and the second test bump. The one of the data bumps is most adjacent to the second test bump.

A method for forming a chip package structure is provided. The method includes disposing a first chip structure and a second chip structure over a wiring substrate. The first chip structure is spaced apart from the second chip structure by a gap. The method includes disposing a ring structure over the wiring substrate. The ring structure has a first opening, the first chip structure and the second chip structure are in the first opening, the first opening has a first inner wall, the first inner wall has a first recess, and the gap extends toward the first recess.

In an integrated optoelectronic module according to the present disclosure, a heat dissipation path for an electric integrated circuit (IC) for signal processing, which consumes a relatively large amount of power, and a heat dissipation path for an electric IC for driving an optical circuit are separated from each other. The electric IC for driving an optical circuit is mounted on a connection surface of a photonic IC in the state in which a connection surface of the electric IC for driving an optical circuit faces the connection surface of the photonic IC. The electric IC for driving an optical circuit is housed in a depressed portion formed at a portion in a substrate on a connection surface side coupled to a photonic IC. The bottom portion of the depressed portion is thermally coupled to a non-connection surface of the electric IC for driving an optical circuit.

Lead frames for semiconductor device packages may include lead fingers proximate to a die-attach pad. A convex corner of the lead frame proximate to a geometric center of the lead frame may be rounded to include a radius of curvature of at least two times a greatest thickness of the die-attach pad. The thickness of the die-attach pad may be measured in a direction perpendicular to a major surface of the die-attach pad. A shortest distance between the die-attach pad and each one of the lead fingers having a surface area larger than an average surface area of the lead fingers may be at least two times the greatest thickness of the die-attach pad.

An embedded component substrate structure and a method for manufacturing the same, with a carrier structure being formed with a groove on a top, and a chip structure with a plurality of conductors disposed in the groove. Dielectric layers are disposed on a top and a bottom of the carrier structure, and two opposite ends of multiple circuits in the carrier structure are exposed to the dielectric layers. Circuit build-up structures are disposed on the dielectric layers, and electrically connect to the circuits of the carrier structure.

An IC chip package includes a substrate having a plurality of interconnect metal pads, and a chip having a plurality of interconnect metal pads arranged thereon. An interconnect solder structure electrically connects each of the plurality of interconnect metal pads. The chip is devoid of the interconnect solder structures and interconnect metal pads at one or more corners of the chip. Rather, a dummy solder structure connects the IC chip to the substrate at each of the one or more corners of the IC chip, and the dummy solder structure is directly under at least one side of the IC chip at the one or more corners of the IC chip. The dummy solder structure has a larger volume than a volume of each of the plurality of interconnect solder structures. The dummy solder structure eliminates a chip-underfill interface at corner(s) of the chip where delamination would occur.

The present disclosure relates to a chip scale package (CSP) comprising: a first set of CSP contact balls or bumps; a second set of CSP contact balls or bumps; and a channel routing region, the channel routing region being devoid of any CSP contact balls or bumps.

The present disclosure relates to a chip scale package (CSP) comprising: a first set of CSP contact balls or bumps; a second set of CSP contact balls or bumps; and a channel routing region, the channel routing region being devoid of any CSP contact balls or bumps.

A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering only top faces on the upper surface side of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.