A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

A method of bonding two substrates together includes applying a plurality of templating spheres to a first metal layer on a first substrate of the two substrates, applying a metal on the plurality of templating spheres to form a porous metal layer, and bonding a solder layer arranged on a second substrate of the two substrates to the porous metal layer with heat and pressure such that pores of the porous metal layer are filled with solder material and intermetallic compounds, forming a metal inverse opals layer bonding the first and second substrates together.

Semiconductor device assemblies that comprise a package substrate having semiconductor devices on two sides. A solder layer can thermally couple one or more semiconductor devices on a side of the package with a circuit board. Methods of manufacturing assemblies having a semiconductor device thermally coupled to a circuit board are also provided.