A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.

The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

The present invention aims to provide a method for producing a semiconductor device, the method being capable of achieving high reliability by suppressing voids. The present invention also aims to provide a flip-chip mounting adhesive for use in the method for producing a semiconductor device. The present invention relates to a method for producing a semiconductor device, including: step 1 of positioning a semiconductor chip on a substrate via an adhesive, the semiconductor chip including bump electrodes each having an end made of solder; step 2 of heating the semiconductor chip at a temperature of the melting point of the solder or higher to solder and bond the bump electrodes of the semiconductor chip to an electrode portion of the substrate, and concurrently to temporarily attach the adhesive; and step 3 of removing voids by heating the adhesive under a pressurized atmosphere, wherein the adhesive has an activation energy ΔE of 100 kJ/mol or less, a reaction rate of 20% or less at 2 seconds at 260° C., and a reaction rate of 40% or less at 4 seconds at 260° C., as determined by differential scanning calorimetry and Ozawa method.

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

A device (2) is formed on a main surface of a substrate (1). The main surface of the substrate (1) is bonded to the undersurface of the counter substrate (14) via the bonding member (11,12,13) in a hollow state. A circuit (17) and a bump structure (26) are formed on the top surface of the counter substrate (14). The bump structure (26) is positioned in a region corresponding to at least the bonding member (11,12,13), and has a higher height than that of the circuit (17).

In a display device, in which an IC chip, which has an output and an input bump group, is mounted onto a display panel via an ACF, and a total area of end surfaces of output bumps that form the output bump group is larger than a total area of end surfaces of input bumps that form the input bump group, a concentration of conductive particles in a portion of the ACF corresponding to the output bump group is lower than a concentration of conductive particles in a portion of the ACF corresponding to the input bump group.

Provided is a resin sheet, wherein in a stress measurement in which a dynamic shear strain is applied in a direction parallel to a surface, the difference between a loss tangent as measured when a strain amplitude is 10% of the sheet thickness and a loss tangent as measured when the amplitude is 0.1% is equal to or greater than 1 at a temperature of 80° C. and a frequency of 0.5 Hz. The resin sheet of the present invention can provide a semiconductor device with excellent connection reliability, wherein air bubbles and cracks are less likely to occur in the resin sheet. In the resin composition of the present invention, aggregates are less likely to occur during storage. The resin sheet obtained by forming the resin composition into a sheet has good flatness. The hardened material thereof can provide a circuit board or a semiconductor device with high connection reliability.

Provided is a resin sheet, wherein in a stress measurement in which a dynamic shear strain is applied in a direction parallel to a surface, the difference between a loss tangent as measured when a strain amplitude is 10% of the sheet thickness and a loss tangent as measured when the amplitude is 0.1% is equal to or greater than 1 at a temperature of 80° C. and a frequency of 0.5 Hz. The resin sheet of the present invention can provide a semiconductor device with excellent connection reliability, wherein air bubbles and cracks are less likely to occur in the resin sheet. In the resin composition of the present invention, aggregates are less likely to occur during storage. The resin sheet obtained by forming the resin composition into a sheet has good flatness. The hardened material thereof can provide a circuit board or a semiconductor device with high connection reliability.

A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.

A method for the production of a silver sintering agent in the form of a layer-shaped silver sintering body having silver oxide surfaces and the use thereof are provided.