A method for fabricating a semiconductor device includes: forming a first bonding layer on a first wafer and an etching mask on the first bonding layer; etching an edge portion of the first bonding layer by using the etching mask, such that a portion of the first wafer is exposed; removing the etching mask; and bonding a second wafer to the first bonding layer.

Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

A semiconductor device including a clip, and the clip includes a clip slot, and a slug and the slug includes a groove. The clip and the slug are attached by the ultrasonic welding. The groove and the clip slot are at least partially overlapping to form a gas pathway.

A method is disclosed herein. The method includes dicing a wafer and applying a mask. The method includes spraying die bond material, at a first temperature, to a surface of the wafer and cooling the die bond material at a second temperature to at least partially solidify the die bond material. The method also includes removing the mask from the wafer through the die bond material. After the removing of the mask, the method includes curing the die bond material to form a die attach film layer on the wafer.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

Embodiments of the present disclosure include method for sequentially mounting multiple semiconductor devices onto a substrate having a composite metal structure on both the semiconductor devices and the substrate for improved process tolerance and reduced device distances without thermal interference. The mounting process causes “selective” intermixing between the metal layers on the devices and the substrate and increases the melting point of the resulting alloy materials.

Provided is a method of manufacturing a semiconductor device that can lead a surface of sinter paste to be flattened before depositing a power semiconductor chip so as to achieve high-density packaging. The manufacturing method applies sinter paste having a surface provided with a projection to a main surface of a conductive plate, dries the sinter paste, flattens the surface of the sinter paste by applying a pressure to the sinter paste so as to squash the projection on the surface of the sinter paste, deposits a semiconductor chip on the main surface of the conductive plate with the sinter paste interposed, and sinters the sinter paste by heating and pressure application to form a bonding layer so as to bond the conductive plate and the semiconductor chip together via the bonding layer.