A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A quantum dot LED package is disclosed. The quantum dot LED package includes: a heat dissipating reflector having a through cavity; a quantum dot plate accommodated in the upper portion of the through cavity; an LED chip accommodated in the lower portion of the through cavity and whose top surface is coupled to the lower surface of the quantum dot plate; electrode pads disposed on the lower surface of the LED chip and protruding more downward than the lower surface of the heat dissipating reflector; and a resin part formed in the through cavity to fix between the LED chip and the reflector and between the quantum dot plate and the reflector.

A quantum dot LED package is disclosed. The quantum dot LED package includes: a heat dissipating reflector having a through cavity; a quantum dot plate accommodated in the upper portion of the through cavity; an LED chip accommodated in the lower portion of the through cavity and whose top surface is coupled to the lower surface of the quantum dot plate; electrode pads disposed on the lower surface of the LED chip and protruding more downward than the lower surface of the heat dissipating reflector; and a resin part formed in the through cavity to fix between the LED chip and the reflector and between the quantum dot plate and the reflector.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A support substrate including a plurality of channels on a front side is provided. A cover layer is formed by anisotropically depositing a sacrificial cover material over the plurality of channels. Cavities laterally extend within the plurality of channels underneath a horizontally extending portion of the cover layer. An encapsulation layer is conformally deposited. First semiconductor devices, first metal interconnect structures, and first bonding pads are formed over a top surface of the encapsulation layer. A device substrate with second bonding pads is provided. The second bonding pads are bonded with the first bonding pads to form a bonded assembly. Peripheral portions of the encapsulation layer are removes and peripheral portions of the cover layer are physically exposed. The cover layer is removed employing an isotropic etch process by propagating an isotropic etchant through the cavities to separate the support substrate from the bonded assembly.

Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A plurality of solder thermal interface material (STIM) thermal interconnects may be coupled with the die and an integrated heat spreader (IHS) may be coupled with the plurality of STIM thermal interconnects. A thermal underfill material may be positioned between the IHS and the die such that the thermal underfill material at least partially surrounds the plurality of STIM thermal interconnects. Other embodiments may be described or claimed.

A quantum dot LED package is disclosed. The quantum dot LED package includes: a heat dissipating reflector having a through cavity; a quantum dot plate accommodated in the upper portion of the through cavity; an LED chip accommodated in the lower portion of the through cavity and whose top surface is coupled to the lower surface of the quantum dot plate; electrode pads disposed on the lower surface of the LED chip and protruding more downward than the lower surface of the heat dissipating reflector; and a resin part formed in the through cavity to fix between the LED chip and the reflector and between the quantum dot plate and the reflector.

A quantum dot LED package is disclosed. The quantum dot LED package includes: a heat dissipating reflector having a through cavity; a quantum dot plate accommodated in the upper portion of the through cavity; an LED chip accommodated in the lower portion of the through cavity and whose top surface is coupled to the lower surface of the quantum dot plate; electrode pads disposed on the lower surface of the LED chip and protruding more downward than the lower surface of the heat dissipating reflector; and a resin part formed in the through cavity to fix between the LED chip and the reflector and between the quantum dot plate and the reflector.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.